Effect of TiO2 Anatase Layer for Bi4Ti3O12 Thin Film Prepared on La0.05Sr0.95TiO3 Substrate

Abstract

Bi4Ti 3 0 12 (BIT) thin films with Ti0 2 anatase layer were prepared on La 0 . 05 Sr 0 95 Ti0 3 (LSTO) substrates by metalorganic vapor deposition using Bi(CH 3 ) 3 and Ti(i-OC 3 H 7 ) 4 sources. When the substrate temperature was fixed at 500°C, the BIT thin films exhibited highly c-axis orientation. The c-axis orientation does not depend on layer created on LSTO substrate. The grain size of BIT thin film with Ti0 2 anatase layer is smaller than that with of BIT thin film with no-layer. The grain size of the BIT thin film accords with that of Ti0 2 anatase layer. This indicates that the Ti0 2 anatase layer acts not as barrier layer but as an initial nucleation layer of the BIT thin film . The postannealed BIT thin film with Ti0 2 anatase layer exhibited random orientation and P-E hysteresis loop.