Effect of thermal annealing on the structural and optical properties of black silicon

Hakhoyan

Physica Status Solidi (a)

et al. 2023

Self Cite

Black silicon (b‐Si) has many attractive properties and is currently being adopted in various fields of semiconductor technology. It is shown here that b‐Si during thermal activation may serve as an external gettering layer to remove metallic impurities and associated defects from bulk Si. The gettering efficiency by b‐Si is estimated according to the results of studying the resistivity, defect density, interstitial iron concentration, and effective minority carrier lifetime on gettered test and ungettered reference Si samples. It is shown that in the thermal oxidation process, the b‐Si layer serves as an effective drain for excess iron atoms and other fast‐diffusing impurities, thereby significantly reducing the density of oxidation‐induced stacking faults in Si. In addition, the resistivity of the substrates decreases, and the bulk carrier lifetime increases significantly. Finally, gettering by b‐Si is introduced into the solar cells fabrication process and its effect on solar cell current–voltage characteristics is investigated. It has been shown that all electronic parameters of the solar cells are improved. The conversion efficiency of ungettered solar cells is 16.8%, and for gettered solar cells, depending on the oxidation temperature, it increases by 1.36–1.96%.

Section: Resultsmentioning

confidence: 72%

“…The average valley‐to‐peak height, base diameter, and in‐plane periodicity of the b‐Si needles were 640, 100, and 150 nm, respectively. [ 25 ]…”

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

External Gettering of Metallic Impurities by Black Silicon Layer

Hakhoyan

Physica Status Solidi (a)

et al. 2023

Self Cite

Influence of Increasing Density of Microstructures on the Self‐Propagating Reaction of Al/Ni Reactive Nanoscale Multilayers

Jaekel,

Riegler,

Sauni Camposano

et al. 2024

Adv Eng Mater

Surface structuring methods are crucial in semiconductor manufacturing, as they enable the creation of intricate structures on the semiconductor surface, influencing the material’s electrical, mechanical, and chemical properties. This study employs one such structuring method known as reactive ion etching to create black Si structures on silicon substrates. After thermal oxidation, their influence on the reaction of Al/Ni nanoscale multilayers is. For this purpose, various densities of thermally oxidized black Si structures are investigated. It reveals distinct reactive behaviors without corresponding differences in energy release during differential scanning calorimetry measurements. Higher oxidized black Si structure densities result in elevated temperatures and faster reaction propagation, showing fewer defects and reduced layer connections in cross‐sectional analyses. The properties of the reactive multilayers on high structure density show the same performance as a reaction on flat thermal SiO2, causing delamination when exceeding 23 structures per µm2. Conversely, lower structure density ensures attachment of reactive multilayers to the substrate due to an increased number of defects, acting as predetermined breaking points for the AlNi alloy. By establishing the adhesion between the reacted multilayer and the substrate, surface structuring could lead to a potential increase in bond strength when using reactive multilayers for bonding.This article is protected by copyright. All rights reserved.

Physica Status Solidi (a)

Extended Infrared Absorption in Nanostructured Si Through Se Implantation and Flash Lamp Annealing

Radfar,

Liu,

Berencén

et al. 2024

Nanostructured silicon can reduce reflectance loss in optoelectronic applications, but intrinsic silicon cannot absorb photons with energy below its 1.1 eV bandgap. However, incorporating a high concentration of dopants, i.e., hyperdoping, to nanostructured silicon is expected to bring broadband absorption ranging from UV to short‐wavelength IR (SWIR, <2500 nm). In this work, we prepare nanostructured silicon using cryogenic plasma etching, which is then hyperdoped with selenium (Se) through ion implantation. Besides sub‐bandgap absorption, ion implantation forms crystal damage, which can be recovered through flash lamp annealing. We study crystal damage and broadband (250–2500 nm) absorption from planar and nanostructured surfaces. We first show that nanostructures survive ion implantation hyperdoping and flash lamp annealing under optimized conditions. Secondly, we demonstrate that nanostructured silicon has a 15% higher sub‐bandgap absorption (1100–2500 nm) compared to its non‐hyperdoped nanostructure counterpart while maintaining 97% above‐bandgap absorption (250–1100 nm). Lastly, we simulate the sub‐bandgap absorption of hyperdoped Si nanostructures in a 2D model using the finite element method. Simulation results show that the sub‐bandgap absorption is mainly limited by the thickness of the hyperdoped layer rather than the height of nanostructures.