Effect of Thermal Annealing on Zinc Diffused- CdTe Thin Film

doi:10.21608/ejs.2000.151742

Cited by 3 publications

(1 citation statement)

References 7 publications

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“…Many optoelectronic components, such as infrared and X-ray light detectors, as well as their potential uses in switching and memory systems, utilize CdTe. Cadmium telluride is one of the most promising semiconductor materials for inexpensively making thin-film photovoltaic cells with excellent efficiency [11,12]. The physical qualities of the film rely on the substrate application procedure.…”

Section: Introductionmentioning

confidence: 99%

Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

Ali¹,

Mustafa²

2023

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We investigated at the optical properties, structural makeup, and morphology of thin films of cadmium telluride (CdTe) with a thickness of 150 nm produced by thermal evaporation over glass. The X-ray diffraction study showed that the films had a crystalline composition, a cubic structure, and a preference for grain formation along the (111) crystallographic direction. The outcomes of the inquiry were used to determine these traits. With the use of thin films of CdTe that were doped with Ag at a concentration of 0.5%, the crystallization orientations of pure CdTe (23.58, 39.02, and 46.22) and CdTe:Ag were both determined by X-ray diffraction. orientations (23.72, 39.21, 46.40) For samples that were pure and those that were doped with silver, the optical band gap shrank by (1.52-1.47) eV (400–1100)nm resulting in a drop in the absorption coefficient. An incident power density of (100 mW/cm2) was used to examine the I-V properties of heterojunctions created by light on a variety of clean and doped materials. In accordance with the X-ray diffraction analysis, the films had a cubic structure and dominated grain growth along the (111) crystallographic direction.

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Section: Introductionmentioning

confidence: 99%

Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

Ali¹,

Mustafa²

2023

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STUDY THE STRUCTURAL AND ELECTRICAL PROPERTIES OF CdTe:Ag THIN FILMS

Mohammed¹

2010

JNUS

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The influence of silver doped n-type polycrystalline CdTe film with thickness of 200 nm and rate deposition of 0.3 nm.s -1 prepared under high vacuum using thermal co-evaporation technique on its some structural and electrical properties was reported. The X-ray analysis showed that all samples are polycrystalline and have the cubic zinc blend structure with preferential orientation in the [111] direction. Films doping with impurity percentages (2, 3, and 4) %Ag lead to a significant increase in the carrier concentration, so it is found to change from 23.493 10 8 cm -3 to 59.297 10 8 cm -3 for pure and doped CdTe thin films with 4%Ag respectively. But films doping with impurity percentages above lead to a significant decrease in the electrical conductivity and Hall mobility, so they are found to change from 6.3 10 -7 ( .cm) -1 to 1.59 10 -7 ( .cm) -1 , and from 16.759 10 2 cm 2 .(V.sec) -1 to 1.675 10 2 cm 2 .(V.sec) -1 respectively, for pure and doped CdTe thin films with 4%Ag. And also the doping lead to change the kind of conductivity for thin films obtain, so we found that pure CdTe thin film is n-type and then convert to p-type when thin film doped with (2, 3, and4) %Ag.

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The Effect of Annealing on the Structural, Electrical and Optical Properties of CdTe Thin Films

Al-Ali¹,

Ali²,

Al-Haddad³

2013

JNUS

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CdTe Thin films were deposited by thermal evaporation on glass substrates under vacuum of 2×10 -6 mbar. The annealing has been done under vacuum 10 -3 mbar at (303,373,423,473) K annealing temperature. The structure was investigated by XRD technique. It is found that the structure for all samples (as-deposited and annealed) is polycrystalline. The d.c. electrical conductivity was investigated and attributed to two mechanisms. The activation energy Ea increases from 0.13 to 0.55eV as annealing temperature increases from 303 to 473K. The a.c. conductivity reveals that the dependence of activation energy Ew on frequency is larger than that on temperature. Ew increases from 0.11 to 0.18eV as annealing temperature increases from 303 to 473K. Optical studies showed that optical energy gap increases with increasing annealing temperature from 1.4eV at 303K to 2.15eVat 473K.Keyword : CdTe thin films , electrical and optical properties of CdTe thin films.

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Effect of Thermal Annealing on Zinc Diffused- CdTe Thin Film

Cited by 3 publications

References 7 publications

Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

STUDY THE STRUCTURAL AND ELECTRICAL PROPERTIES OF CdTe:Ag THIN FILMS

The Effect of Annealing on the Structural, Electrical and Optical Properties of CdTe Thin Films

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