Effect of thermal annealing on the performance of WO 3 –Ag–WO 3 transparent conductive film

Lin, Baihan; Lan, Changyong; Li, Chun; Chen, Zexiang

doi:10.1016/j.tsf.2014.10.045

Cited by 26 publications

(9 citation statements)

References 23 publications

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“…We note that such a performance can be comparable to the ITO with moderate quality . In addition, we also find that the TC performance of the sputtered film does not show considerable improvement by post-thermal annealing treatment, as in the case of the thermally evaporated one . This may be attributed to the presence of an essential substrate heating effect during sputtering deposition.…”

Section: Resultsmentioning

confidence: 56%

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Reactive Sputter Deposition of WO₃/Ag/WO₃ Film for Indium Tin Oxide (ITO)-Free Electrochromic Devices

Yin

Lan

Guo

et al. 2016

ACS Appl. Mater. Interfaces

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Functioning both as electrochromic (EC) and transparent-conductive (TC) coatings, WO3/Ag/WO3 (WAW) trilayer film shows promising potential application for ITO-free electrochromic devices. Reports on thermal-evaporated WAW films revealed that these bifunctional WAW films have distinct EC characteristics; however, their poor adhesive property leads to rapid degradation of coloring-bleaching cycling. Here, we show that WAW film with improved EC durability can be prepared by reactive sputtering using metal targets. We find that, by introducing an ultrathin tungsten (W) sacrificial layer before the deposition of external WO3, the oxidation of silver, which leads to film insulation and apparent optical haze, can be effectively avoided. We also find that the luminous transmittance and sheet resistance were sensitive to the thicknesses of tungsten and silver layers. The optimized structure for TC coating was obtained to be WO3 (45 nm)/Ag (10 nm)/W (2 nm)/WO3 (45 nm) with a sheet resistance of 16.3 Ω/□ and a luminous transmittance of 73.7%. Such film exhibits compelling EC performance with decent luminous transmittance modulation ΔTlum of 29.5%, fast switching time (6.6 s for coloring and 15.9 s for bleaching time), and long-term cycling stability (2000 cycles) with an applied potential of ±1.2 V. Thicker external WO3 layer (45/10/2/100 nm) leads to larger modulation with maximum ΔTlum of 46.4%, but at the cost of significantly increasing the sheet resistance. The strategy of introducing ultrathin metal sacrificial layer to avoid silver oxidation could be extended to fabricating other oxide-Ag-oxide transparent electrodes via low-cost reactive sputtering.

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Section: Resultsmentioning

confidence: 56%

“…The distance between the substrate and the target was kept at 7 cm. For comparison, the thermally evaporated WAW film was prepared according to our previous report . Briefly, the WAW films were deposited under the vacuum pressure of 4 × 10 –4 Pa.…”

Section: Experimental Sectionmentioning

confidence: 99%

Reactive Sputter Deposition of WO₃/Ag/WO₃ Film for Indium Tin Oxide (ITO)-Free Electrochromic Devices

Yin

Lan

Guo

et al. 2016

ACS Appl. Mater. Interfaces

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“…Lin et al [10], investigating the optical and electrical properties of WO 3 /Ag/WO 3 multilayer films prepared by thermal evaporation, showed that the sheet resistance was gradually improved when the annealing temperatures increased to 400 C. On the one hand, the optical transmittance increased upon annealing below 200 C, above which the transmittance was degraded. The maximum FOM was estimated to be 11 Â 10 À3 U À1 when the sample was annealed at 100 C. Miao et al [11] investigated the electrical and optical properties of Al-doped ZnO (AZO)/Ag/AZO trilayer films prepared by radio frequency (RF) magnetron sputtering as functions of Ag and AZO layers thicknesses.…”

Section: Introductionmentioning

confidence: 99%

Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Kim

Lee

et al. 2015

Current Applied Physics

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“…The electron mobility is of paramountimportance in that it determines the transverse extension of the current [14,15]. However, their electron mobilities are 32 cm 2 /(v s) and 69 cm 2 /(v s), which are too small to limit the lateral diffusion of the current [16,17,18]. In recent years, there have been many studies of graphene as a transparent conductive layer, but it has been found that the sheet resistance of single- layer graphene is particularly high, and the transparency of multilayer graphene has been reduced [19,20,21].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Graphene-Metal Transparent Conductive Nanocomposite Layers for Photoluminescence Enhancement

et al. 2019

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In this work, the synthesis and characterization ofgraphene-metal nanocomposite, a transparent conductive layer, is examined. This transparent conductive layer is named graphene-Ag-graphene (GAG), which makes full use of the high electron mobility and high conductivity characteristics of graphene, while electromagnetically induced transparency (EIT) is induced by Ag nanoparticles (NPs). The nanocomposite preparation technique delivers three key parts including the transfer of the first layer graphene, spin coating of Ag NPs and transfer of the second layer of graphene. The GAG transparent conductive nanocomposite layer possess a sheet resistance of 16.3 ohm/sq and electron mobility of 14,729 cm2/(v s), which are superior to single-layer graphene or other transparent conductive layers. Moreover, the significant enhancement of photoluminescence can be ascribed to the coupling of the light emitters in multiple quantum wells with the surface plasmon Ag NPs and the EIT effect.

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Effect of thermal annealing on the performance of WO 3 –Ag–WO 3 transparent conductive film

Cited by 26 publications

References 23 publications

Reactive Sputter Deposition of WO₃/Ag/WO₃ Film for Indium Tin Oxide (ITO)-Free Electrochromic Devices

Reactive Sputter Deposition of WO₃/Ag/WO₃ Film for Indium Tin Oxide (ITO)-Free Electrochromic Devices

Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Fabrication of Graphene-Metal Transparent Conductive Nanocomposite Layers for Photoluminescence Enhancement

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Effect of thermal annealing on the performance of WO 3 –Ag–WO 3 transparent conductive film

Cited by 26 publications

References 23 publications

Reactive Sputter Deposition of WO3/Ag/WO3 Film for Indium Tin Oxide (ITO)-Free Electrochromic Devices

Reactive Sputter Deposition of WO3/Ag/WO3 Film for Indium Tin Oxide (ITO)-Free Electrochromic Devices

Optimization of transmittance and resistance of indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer electrodes for photovoltaic devices

Fabrication of Graphene-Metal Transparent Conductive Nanocomposite Layers for Photoluminescence Enhancement

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Reactive Sputter Deposition of WO₃/Ag/WO₃ Film for Indium Tin Oxide (ITO)-Free Electrochromic Devices

Reactive Sputter Deposition of WO₃/Ag/WO₃ Film for Indium Tin Oxide (ITO)-Free Electrochromic Devices