We employed a patterned current blocking layer (CBL) to enhance light output power of GaN-based light-emitting diodes (LEDs). Nanoimprint lithography (NIL) was used to form patterned CBLs (a diameter of 260 nm, a period of 600, and a height of 180 nm). LEDs (chip size: 300 × 800 µm) fabricated with no CBL, a conventional SiO CBL, and a patterned SiO CBL, respectively, exhibited forward-bias voltages of 3.02, 3.1 and 3.1 V at an injection current of 20 mA. The LEDs without and with CBLs gave series resistances of 9.8 and 11.0 Ω, respectively. The LEDs with a patterned SiO CBL yielded 39.6 and 11.9% higher light output powers at 20 mA, respectively, than the LEDs with no CBL and conventional SiO CBL. On the basis of emission images and angular transmittance results, the patterned CBL-induced output enhancement is attributed to the enhanced light extraction and current spreading.
Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 μm in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq) than the ITO-only film (950 Ω sq). LEDs (chip size: 300 × 800 μm) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.
Transparent conductive electrodes (TCEs) featuring a smooth surface are indispensable for preserving pristine electrical characteristics in optoelectronic and transparent electronic devices. For high-efficiency organic light emitting diodes (OLEDs), a high outcoupling efficiency, which is crucial, is only achieved by incorporating a wavelength-scale undulating surface into a TCE layer, but this inevitably degrades device performance. Here, an optically flat, high-conductivity TCE composed of core/shell Ag/ZnO nanochurros (NCs) is reported embedded within a resin film on a polyethylene terephthalate substrate, simultaneously serving as an efficient outcoupler and a flexible substrate. The ZnO NCs are epitaxially grown on the {100} planes of a pentagonal Ag core and the length of ZnO shells is precisely controlled by the exposure time of Xe lamp. Unlike Ag nanowires films, the Ag/ZnO NCs films markedly boost the optical tunneling of light. Green-emitting OLEDs (2.78 × 3.5 mm ) fabricated with the Ag/ZnO TCE exhibit an 86% higher power efficiency at 1000 cd m than ones with an Sn-doped indium oxide TCE. A full-vectorial electromagnetic simulation suggests the suppression of plasmonic absorption losses within their Ag cores. These results provide a feasibility of multifunctional TCEs with synthetically controlled core/shell nanomaterials toward the development of high-efficiency LED and solar cell devices.
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