Effect of the Wetting Layer on the Output Power of a Double Tunneling-Injection Quantum-Dot Laser

Han, Dae-Seob; Asryan, Levon V.

doi:10.1109/jlt.2009.2033716

Cited by 17 publications

(13 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In [1], single tunneling-injection was utilized into a two-dimensional (2D) active region (quantum well -QW), and in [2]- [9] -into a zero-dimensional (0D) active region (quantum dots -QDs). Double tunneling-injection, i.e., tunneling-injection of both electrons and holes into QDs was proposed in [10]- [12] and further studied theoretically in [13]- [15]. There has also been experimental work on double tunneling-injection into QDs [16]- [19].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Dynamic characteristics of double tunneling-injection quantum dot lasers

Asryan

2015

Novel in-Plane Semiconductor Lasers XIV

Self Cite

View full text Add to dashboard Cite

Dynamic characteristics of double tunneling-injection (DTI) quantum dot (QD) lasers are studied. To reveal the potential of such lasers for high-speed direct modulation of their optical output by pump current, fast carrier injection into QDs and no carrier leakage from QDs are assumed. The small-signal analysis of rate equations is applied. The modulation bandwidth is calculated as a function of the dc component of the injection current density and parameters of the laser structure.

show abstract

Section: Introductionmentioning

confidence: 99%

“…A study of static characteristics [10]- [15] showed that DTI QD lasers possess a potential for low-threshold, temperature-stable, and high-power operation.…”

Section: Introductionmentioning

confidence: 99%

Dynamic characteristics of double tunneling-injection quantum dot lasers

Asryan

2015

Novel in-Plane Semiconductor Lasers XIV

Self Cite

View full text Add to dashboard Cite

show abstract

“…T 0 is above 300 K, i.e., well above (by a factor of more than three) the characteristic temperature of commercial telecommunication QW lasers. Figure 3 shows the LCC and the slope efficiency of a DTI QD laser [9,10,19]. Even in the presence of out-tunneling leakage, the LCC exhibits a fascinating feature distinguishing the DTI QD laser QW QD QW Optical confinement layer n-cladding layer p-cladding layer -+ QW QD QW Optical confinement layer n-cladding layer p-cladding layer -+ Fig.…”

mentioning

confidence: 99%

“…1). In [9,10], the structures of [6][7][8] were referred to as double tunneling-injection (DTI) QD lasers. There have been experimental developments [11][12][13][14] related to the concept of DTI QD lasers.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Double tunneling-injection quantum dot laser: Temperature-stable, high-power, and high-speed operation

Asryan

2011

IEEE Winter Topicals 2011

Self Cite

View full text Add to dashboard Cite

A laser exploiting tunneling-injection of both electrons and holes into quantum dots possesses the potential for temperature-stable and high-power operation and may also be a candidate for high modulation bandwidth.There has been much effort to use quantum dots (QDs) as an active region in diode lasers [1,2]. In the 'conventional' design of QD lasers, the carriers are first injected from the cladding layers into a bulk reservoir [which also serves as the optical confinement layer (OCL) and includes a wetting layer] and then captured into QDs. Due to bipolar (i.e., both electron and hole) populations in the reservoir, a certain fraction of the injection current goes into electron-hole recombination there. The parasitic recombination outside QDs is a major source of the temperature dependence of the threshold current [3]. In addition, the carrier capture from the reservoir into QDs is not instantaneous. For this reason, the carrier density in the reservoir, and hence the parasitic recombination rate, rise, even above the lasing threshold, with injection current. This leads to sublinearity of the light-current characteristic (LCC) and limits the output power, especially at high pump currents [4,5]. Suppression of the parasitic recombination would thus be expected to significantly enhance the temperature stability and the output optical power of a laser.In [6][7][8], to suppress the recombination outside QDs, tunneling injection of both electrons and holes into QDs was proposed from two separate quantum wells (QWs) (Fig. 1). In [9,10], the structures of [6-8] were referred to as double tunneling-injection (DTI) QD lasers. There have been experimental developments [11][12][13][14] related to the concept of DTI QD lasers. A DTI QD laser should be distinguished from the laser of [15][16][17] exploiting tunneling injection of only electrons into QDs. The latter laser serves a purpose different from suppressing the recombination outside QDs (namely, minimizing hot carrier effects) and was referred to as a single tunneling-injection (STI) QD laser in [9, 10].Ideally, out-tunneling of each type of carriers from QDs into the opposite-to-injection-side QW should be completely blocked and hence the electron-hole recombination outside QDs totally suppressed. As a result, the threshold current of such an ideal DTI QD laser would be virtually temperature-insensitive (the characteristic temperature T 0 above 1000 K -see [6][7][8]) and the LCC strictly linear (the dashed line in Fig. 3).To scrutinize the potential of a realistic DTI QD laser for temperature-stable and high-power operation, out-tunneling leakage of carriers from QDs (shown by the inclined arrows in Fig. 1) was considered in [9,10,18,19]. For such a DTI QD laser, Fig. 2 shows T 0 versus root mean square δ of QD-size fluctuations normalized to its maximum tolerable value δ max [18]. As seen from the figure, T 0 is very high throughout the entire range of δ and not significantly affected by the QD-size fluctuations, which is a clear manifestation of robustness of the D...

show abstract