Dynamic characteristics of double tunneling-injection quantum dot lasers

Asryan, Levon V.

doi:10.1117/12.2078550

Cited by 1 publication

(1 citation statement)

References 23 publications

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“…Therefore, having a ubiquitous view of their energy states, carrier dynamics [9], and other physical features which affect the lasing process of a QD is instructive. Based on this fact, many research groups attempt to develop and optimize QDLs to fabricate optoelectronic devices with better performance [5,[10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Impact of Dot Size on Dynamical Characteristics of InAs/GaAs Quantum Dot Lasers

Rajaei

Borji²

2017

Journal of Nanoelectronics and Optoelectronics

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The purpose of this research is to study laser dynamics of InAs/GaAs Quantum Dot Lasers (QDLs) by changing QD energy levels. To date, most of the investigations have focused on only one of these circumstances, and hardly the result of change in the energy levels can be seen in lasing. In this work, in the first step, energy levels of lens-shape QDs are investigated by the eight-band k.p method, their variation for different QD sizes are surveyed, and recombination energies of the discrete levels are determined. Then, by representing a three-level InAs/GaAs QD laser, dynamics of such a laser device is numerically studied by rate equations in which homogeneous and inhomogeneous broadenings are taken into account. The lasing process for both Ground State (GS) and Excited States (ES) was found to be much sensitive to the QD size. It was observed that in larger QDs, photon number and bandwidth of the small signal modulation decrease but turn-on delay, maximum output power, and threshold current of gain increase. It was also found that for a good modulation, smaller QDs, and form the point of view of high-power applications, larger QDs seem better.

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