Effect of the tin impurity on the energy spectrum and photoelectric properties of nanostructured In2O3 films

Drozdov, K. A.; Krylov, I. V.; Irkhina, A.; Vasiliev, R. B.; Rumyantseva, M. N.; Gaskov, Alexander; Ryabova, L. I.; Хохлов, Д. Р.

doi:10.1134/s1063782614040083

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2020

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“…Due to its combination with InP components, the mixed indium-tin oxide (ITO structure) has several outstanding properties: almost metallic conductivity, good transparency in the visible range of electromagnetic radiation and the simplicity for formation of a nanoscale thin film. The optical and electrical properties are explained by the following: replacing the indium atom, tin supplies an additional electron to the conduction band, and such doping effectively increases the electron concentration [8].…”

Section: Introductionmentioning

confidence: 99%

Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide

Mittova¹,

Kostryukov²,

Ilyasova³

et al. 2020

Nanosystems: Phys. Chem. Math.

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The kinetic parameters and the limiting stage of the defining process were established by studying the thermal oxidation of SnO 2 /InP heterostructures (thickness of SnO 2 layer ∼ 50 nm). It was established that SnO 2 does not have a chemical stimulating effect on the film growth rate; however, it is effective as a modifier of their structure and properties. SnO 2 provides the formation of nanoscale films with semiconductor properties.

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Section: Introductionmentioning

confidence: 99%