Effect of the thickness of the Ru-coating on a counter electrode on the performance of a dye-sensitized solar cell

Han, Jeungjo; Yoo, Kicheon; Ko, Min Jae; Yu, Byungkwan; Noh, Yunyoung; Song, Ohsung

doi:10.1007/s12540-012-0013-2

Cited by 16 publications

(9 citation statements)

References 17 publications

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“…Interestingly, the Ru films exhibited sufficient both conductive and electrocatalytic performance so that FTO layers were not required . Also, the comparable electrocatalytic activity has also been shown for ALD Ru coated on carbon nanotubes on FTO glass …”

Section: Cathodesmentioning

confidence: 70%

“…While Pt deposited by pyrolysis is a common electrocatalyst in DSSC cathodes, it suffers from several deficiencies including high material cost, high‐temperature process, and poor stability in corrosive electrolytes. Primary research efforts on ALD films for cathodes have been made in three areas: (1) replacing Pt with stable, lower cost metals, or conductive polymers, (2) integrating electrocatalysts with conductive and highly porous scaffolds, and (3) synthesizing at low temperature for flexible substrates . Often two or three of these strategies are combined to gain synergistic effects.…”

Section: Cathodesmentioning

confidence: 99%

“…As an alternative novel metal to Pt, Han et al deposited Ru by ALD on FTO‐glass. Ru is much less expensive (US $1.76 g −1 ) compared to Pt (US $22.5 g −1 ) and has lower resistivity as well as better thermal and chemical durability . They demonstrated that ALD Ru film is a promising electrocatalyst for DSSCs, achieving the overall conversion efficiency, 3.4% with 90 nm thick Ru films deposited at 250 °C .…”

Section: Cathodesmentioning

confidence: 99%

“…Ru is much less expensive (US $1.76 g −1 ) compared to Pt (US $22.5 g −1 ) and has lower resistivity as well as better thermal and chemical durability . They demonstrated that ALD Ru film is a promising electrocatalyst for DSSCs, achieving the overall conversion efficiency, 3.4% with 90 nm thick Ru films deposited at 250 °C . Moreover, for large effective area, Ru films composed of two different topologies and Ru nanodots on flat Ru films, were synthesized by ALD followed by postthermal annealing.…”

Section: Cathodesmentioning

confidence: 99%

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Atomic Layer Deposition for Sensitized Solar Cells: Recent Progress and Prospects

Kim

Losego

Peng

et al. 2016

Adv Materials Inter

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of which are necessary for the successful commercialization of sensitized solar cell (SSC).This report discusses recent progress in using ALD (and MLD) films (red in Table 1) for SSCs, including DSSCs, quantum dot-sensitized solar cells, solid (quasi)-state dye-sensitized solar cells, and perovskite-sensitized solar cells. The first three sections address how ALD can be used to manipulate charge transport in the photoanode, including the creation of core-shell semiconducting scaffolds and the conformal deposition of electrically insulating blocking to control electronic recombination. The next section focuses on synthesizing novel semiconducting scaffolds by ALD to effectively manipulate incident light and charge transport. Next this report describes how ALD can be used to create efficient and stable sensitizers. The final section discusses how ALD can favorably improve cathode materials, especially for electrocatalytic systems. Manipulation of Charge TransportSince the seminal demonstration of O'Regan and Grätzel in the early 1990s, [4] m-TiO 2 (mesoporous TiO 2 ) has become the standard nanostructured semiconducting scaffold of choice for DSSCs. A 10 μm thick m-TiO 2 layer can have a net surface area exceeding 1000× the area of the projected planar surface. Once sensitized, the high surface area of m-TiO 2 permits sufficient light absorption to achieve >10% light-to-electric conversion efficiency. [5] As the efficiencies continue to increase and approach their theoretical limit, more effort is being placed on reducing performance losses across various DSSC interfaces. Major performance losses occur due to charge recombination at the semiconductor/electrolyte and semiconductor/fluorinedoped tin oxide (FTO) interfaces. ALD/MLD has been used to modify these interfaces to both understand fundamental electronic transport phenomena and improve device performance. In the following three subsections, we discuss the use of ALD/ MLD films for manipulating charge transfer kinetics in photoanodes for enhancing overall electron collection efficiency. Core-Shell StructuresCore-shell assemblies are used in DSSCs to manipulate electron transfer processes across the sensitizer/semiconductor interface. Initial demonstrations of core-shell assemblies were Atomic layer deposition (ALD) and molecular layer deposition (MLD) are vapor phase deposition techniques used to create conformal coatings with molecular-level control of thickness and composition. Recently, ALD and MLD have been extensively exploited to engineer the complex interfaces of dye-sensitized solar cells (DSSCs) and other molecularly functionalized photoelectrochemical devices to improve the performance and long-term stability. This progress report describes the recent advances in the applications of ALD and MLD for sensitized solar cells including DSSCs then discusses current challenges and future opportunities of ALD.

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Section: Cathodesmentioning

confidence: 70%

Section: Cathodesmentioning

confidence: 99%

Section: Cathodesmentioning

confidence: 99%

Section: Cathodesmentioning

confidence: 99%

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Atomic Layer Deposition for Sensitized Solar Cells: Recent Progress and Prospects

Kim

Losego

Peng

et al. 2016

Adv Materials Inter

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“…A few ALD materials (e.g., Ru, [163] Pt, [164] and Ni 2 S [165] ) were investigated for the counter electrode (CE) of DSSCs as well. Jeungjo et al [163] deposited Ru catalytic layer on FTO substrate at 250°C as the CE.…”

Section: Counter Electrodesmentioning

confidence: 99%

Nanoengineering Energy Conversion and Storage Devices via Atomic Layer Deposition

Wen

Zhou

Wang

et al. 2016

Advanced Energy Materials

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Nanostructured materials show a promising future in energy conversion and storage. However, different challenges shall be addressed to take the full advantages of nanomaterials, such as excess charge recombination sites yielded from large surface area and inefficient charge carrier separation because of poor material junctions in solar cells and solar water splitting cells, as well as high risk of surface side reactions and low active material density in batteries and supercapacitors. Considering its surface self‐limiting reaction mechanism, atomic layer deposition (ALD) enables the deposition of a thin film on high aspect ratio structures with a highly controllable manner (e.g., atomic accuracy and perfect conformity), which make it very suitable to overcome the key challenges associated with the size and dimension decrease of nanomaterials. In this review, the recent progress of the ALD application and processing in energy‐related devices is highlighted. Particular emphasis is placed on employing ALD for improving the device performance via synthesizing, modifying, or stabilizing their corresponding components. Finally, the challenges regarding the material synthesis and scalable manufacturing of the ALD technique are also discussed.

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Metal and Alloy for CE Catalysts in Dye‐Sensitized Solar Cells

Duan

Tang

2018

Counter Electrodes for Dye‐sensitized and Perovskite Solar Cells

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Effect of the thickness of the Ru-coating on a counter electrode on the performance of a dye-sensitized solar cell

Cited by 16 publications

References 17 publications

Atomic Layer Deposition for Sensitized Solar Cells: Recent Progress and Prospects

Atomic Layer Deposition for Sensitized Solar Cells: Recent Progress and Prospects

Nanoengineering Energy Conversion and Storage Devices via Atomic Layer Deposition

Metal and Alloy for CE Catalysts in Dye‐Sensitized Solar Cells

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