Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET

Zheng, Zhongshan; Liu, Zhongli; Zhang, Guoqiang; Li, Ning; Fan, Kai; Zhang, Enxia; Yi, Wanbing; Chen, Meng; Wang, Xi

doi:10.1088/1009-1963/14/3/025

Cited by 9 publications

(2 citation statements)

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“…4(a), our procedure was based on the use of four Gaussian-shaped peaks of Si n+ (n = 0, 1, 2, 3, 4) to simulate the chemical structures of Si ions in the silicon oxidation. For Si-rich SiO x (0 < x < 2) films formed by Si ion implantation into the buried oxide films in this study, it is reasonable to assume the possible existence of the five-oxidation states [11]. With the possible existence of the oxidation states after the fluences of Si ions implantation and post anneal, the peak of each oxidation state will be obtained from the fitting without any pre-adjudication.…”

Section: Methodsmentioning

confidence: 99%

Research on ion implantation effect on SIMOX material modification technique by X-ray photoelectron spectroscopy

Zhanga¹,

Zhang²,

Chen³

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Methodsmentioning

confidence: 99%

Research on ion implantation effect on SIMOX material modification technique by X-ray photoelectron spectroscopy

Zhanga¹,

Zhang²,

Chen³

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

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“…As is the case with gate and field oxides [1], the radiation response of buried oxides has been found to be highly dependent on the fabrication process [2,3]. To improve the total-dose radiation tolerance for SIMOX SOI wafers, many methods have been explored, for instance, supplemental implants [4][5][6][7][8], multiple implants [9], lowering the implantation dose of oxygen ions [10] and nitrogen implantation [11][12][13] etc. Among the measurement methods, the MOSFET is the most frequently used.…”

Section: Introductionmentioning

confidence: 99%

A study on the total-dose response for modified silicon-on-insulator materials with the pseudo-MOS method

Zhang¹,

Sun²,

Zhang³

et al. 2006

Semicond. Sci. Technol.

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In this work, silicon-on-insulator wafers fabricated by the separation-byimplantation-of-oxygen method were modified by Si ion implantation to improve their total-dose radiation hardness. The chemical bonds of Si in the buried oxide layer were investigated using x-ray photoelectron spectroscopy. The results of Si 2p were presented to demonstrate the mechanism of radiation hardness with the formation of Si nanocrystals by ion implantation with the post anneal process. The pseudo-MOS method was used to test the I D -V G characteristics of the wafers before and after irradiation. The results showed that the processes of the buried oxide affected the character of the I-V curves of the pseudo-MOS, and a proper modification technology could improve the radiation hardness of the material remarkably.

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Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors

et al. 2016

Applied Physics Letters

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In semiconductor technology, In2O3 nanowire field effect transistor (FET) can serve as an important building block due to its admirable electrical switching properties. However, the relatively too large threshold voltages and threshold voltage fluctuations of the devices may hinder their extensive applications. In this report, N+ ion implantation of gate dielectric was conducted to modulate the threshold voltage of In2O3 nanowire FET. Electrical measurements reveal that the threshold voltage can be reduced to as low as −2.0 V from the initial −23.2 V after ion implantation. This can be attributed to the effects of implantation induced electron traps. Moreover, it is found that the stability of threshold voltage can be improved by ion implantation. This simple and convenient method indicates that gate dielectric ion implantation may be a potential way to realize the low voltage operation and uniform In2O3 nanowire FETs.

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Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOI PMOSFET

Cited by 9 publications

References 0 publications

Research on ion implantation effect on SIMOX material modification technique by X-ray photoelectron spectroscopy

Research on ion implantation effect on SIMOX material modification technique by X-ray photoelectron spectroscopy

A study on the total-dose response for modified silicon-on-insulator materials with the pseudo-MOS method

Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors

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