Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors

Abstract

In semiconductor technology, In2O3 nanowire field effect transistor (FET) can serve as an important building block due to its admirable electrical switching properties. However, the relatively too large threshold voltages and threshold voltage fluctuations of the devices may hinder their extensive applications. In this report, N+ ion implantation of gate dielectric was conducted to modulate the threshold voltage of In2O3 nanowire FET. Electrical measurements reveal that the threshold voltage can be reduced to as low as −2.0 V from the initial −23.2 V after ion implantation. This can be attributed to the effects of implantation induced electron traps. Moreover, it is found that the stability of threshold voltage can be improved by ion implantation. This simple and convenient method indicates that gate dielectric ion implantation may be a potential way to realize the low voltage operation and uniform In2O3 nanowire FETs.

Enhanced performance of In2O3 nanowire field effect transistors with controllable surface functionalization of Ag nanoparticles

“…Therefore, the V th is shifted towards positive value and the transistor is transformed to E-mode. The carrier concentration (n) of In 2 O 3 NW FET with different Ag deposition time 0 s, 30 s, 60 s, and 90 s can be calculated by the following equation [38],…”

“…Nanostructure field effect transistors have attracted much attention as the fundamental building blocks for next generation nanoelectronics beyond Moore's law due to their excellent chemical and physical properties [1][2][3][4][5][6][7]. Indium oxide (In 2 O 3 ), a wide band gap metal oxide semiconductor (~3.6 eV), is regarded as a promising candidate for gas-sensing devices [8][9][10], field effect transistors (FETs) [11][12][13][14], biosensors [15][16][17][18] and solar cells [19,20] owing to their suitable band gap and high electron mobility. A high-performance In 2 O 3 nanowire FET will be very attractive and particularly important for future electronics.…”

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

“…In another study, the electronic performance of mutilayer MoS 2 has been modulated by proton irradiation . Previously, we have utilized gate dielectric implantation technique to improve the stability of NW FETs . Figure shows the transfer characteristics of the FETs after gate dielectric implantation and the corresponding statistical analysis of the V th changes.…”

“…b,d) The corresponding statistical analysis of the threshold voltage changes for the implanted devices. Reproduced with permission . Copyright 2016, American Institute of Physics.…”

Combustion synthesis of electrospun LaInO nanofiber for high-performance field-effect transistors

“…Among various semiconductor nanofiber materials, indium oxide (In 2 O 3 ) is considered as an ideal candidate for field-effect transistors (FETs) due to its high carrier mobility, wide band gap and superior optical transparency in flexible electronic devices [13,14]. However, In 2 O 3 exhibits substantial O vacancies, which cause an excess carrier concentration [15,16]. This excess carrier concentration can deteriorate the electrical performance of In 2 O 3 FETs, leading to a high leakage current, a poor on/off current ratio (I on /I off ) and maintenance of depletion mode (D-mode) In 2 O 3 FET devices with a negative threshold voltage (V TH ).…”