Effect of the sintering temperature on the Ba(Zn1/3Ta2/3)O3 dielectric properties

Ioachim, A.; Toacsǎn, M.I.; Banciu, M.G.; Nedelcu, L.; Duţu, Constantin Augustin; Féder, M.; Plapcianu, C.; Lifei, F.; Niţă, P.

doi:10.1016/j.jeurceramsoc.2006.05.023

Cited by 22 publications

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“…In particular, the Ba(Zn 1/3 Ta 2/3 )O 3 (BZT) ceramics exhibit a high dielectric constant (ɛ r ), a small temperature coefficient of resonance frequency (τ f ), and a high quality factor ( Q ) 5,6 . All these properties are important for application of dielectric ceramics to microwave devices, in satellite broadcasting and as a super‐high Q dielectric resonator in mobile phone base stations, or combiner filter for Personal Communication System applications.…”

Section: Introductionmentioning

confidence: 99%

Ba(Zn_1/3Ta_2/3)O₃ Ceramics for Microwave and Millimeter‐wave Applications

Alexandru

Ioachim

Toacsǎn

et al. 2009

Annals of the New York Academy of Sciences

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The Ba(Zn(1/3)Ta(2/3))O(3) (BZT) ceramic samples were prepared by solid-state reaction and sintered in the range 1550-1650 degrees C for 2 h. Several methods--X-ray diffraction (XRD) and scanning electron microscopy (SEM)--were used for structural and morphological characterization. The unit cell distortion and the presence of the secondary phase content were studied by XRD. A long-range order with a 2:1 ratio of Ta and Zn cations on the octahedral positions of the perovskite structure was noticed with the increase of the sintering temperature. SEM investigations revealed polyhedral well-faceted grains and large grain size distribution. The dielectric properties in the microwave range were measured at room temperature and at 1 kHz on a large temperature interval (+/-150 degrees C). The dielectric parameters were correlated with morphological and structural properties. Ceramic samples were annealed at 1410 degrees C for 30 h to improve the microwave properties. The dielectric constant of BZT samples measured at 6 GHz and at 1 kHz was between 27 and 28 on the whole temperature range, that is, typical values for BZT material. The temperature coefficient of the resonance frequency at 6 GHz exhibits positive values less than 6 ppm/degrees C.

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Section: Introductionmentioning

confidence: 99%

Ba(Zn_1/3Ta_2/3)O₃ Ceramics for Microwave and Millimeter‐wave Applications

Alexandru

Ioachim

Toacsǎn

et al. 2009

Annals of the New York Academy of Sciences

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“…ZnO depletion determines the formation of zincdeficient secondary phases, such as Ba 8 ZnTa 6 O 24 , Ba 3 Ta 2 O 8 or BaTa 2 O 6 , which degrade the quality factor of BZT dielectric ceramic [1,4,5]. Therefore, ZnO loss during processing (calcination, sintering, annealing) plays an important role in controlling the properties and also the crystal structure of BZT material.…”

Section: Resultsmentioning

confidence: 99%

“…It can vary from sample to sample even when they have the same nominal composition due to small differences in the intrinsic crystal structure, microstructure, density and impurity concentration, cationic order and stoichiometry [1]. Moreover, it is well known that the formation of secondary phases leads to a decrease of the quality factor [1,4,5].…”

Section: Resultsmentioning

confidence: 99%

“…The evolution of the ordered and disordered phases was described in terms of the nucleation and growth of small ordered domains with increasing annealing time and temperature [3]. In another trains of thoughts, sintering at temperatures above 1500 8C or an extended thermal treatment leads to ZnO partial volatilization from the surface of BZT samples, which determines the formation of zinc-deficient phases, such as Ba 8 ZnTa 6 O 24 , Ba 3 Ta 2 O 8 or BaTa 2 O 6 [1,4,5].…”

Section: Introductionmentioning

confidence: 99%

“…However, its sinterability is poor and for achieving good dielectric properties, this method needs high sintering temperature ($1600 8C) and long annealing times ($100 h) [1,[5][6][7]. As a consequence, many investigations have been carried out in ordered to reduce the sintering parameters of BZT ceramic without affecting the microwave dielectric properties.…”

Section: Introductionmentioning

confidence: 99%

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