Effect of the seed layer on the growth and orientation of the ZnO nanowires: Consequence on structural and optical properties

Serrano, Aurelio; Arana, Abenhamar Suárez; Galdámez, Antonio; Dutt, A.; Monroy, B.M.; Güell, Frank; Santana, G.

doi:10.1016/j.vacuum.2017.03.010

Cited by 22 publications

(13 citation statements)

References 37 publications

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“…The sizeable binding exciton energy of the ZnO (60 meV, nearly three times that of gallium nitride [ 87 ]) is responsible for the room temperature luminescence of the material and that it persists at temperatures as high as 700 K [ 88 ]. Usually, the ratio between the integrated spectral intensity of NBE and DLE bands is used to estimate the contribution of recombination due to defect levels [ 61 ].…”

Section: Properties Of Znomentioning

confidence: 99%

“…The source temperature, substrate temperature, growth time, carrier gas concentration and flow, the type of substrate, and the characteristics of the catalyst are among the leading parameters to control for precise growth of ZnO Even though the growth process in the VLS technique is relatively simple, the high number of experimental parameters makes the method non-trivial. The source temperature, substrate temperature, growth time, carrier gas concentration and flow, the type of substrate, and the characteristics of the catalyst are among the leading parameters to control for precise growth of ZnO nanowires [61]. In particular, the total chamber pressure, partial oxygen pressure, catalyst thickness, and the growth temperature are the most critical parameters of the process [4].…”

Section: Vapor-liquid-solid Techniquementioning

confidence: 99%

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Photoluminescence of ZnO Nanowires: A Review

et al. 2020

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One-dimensional ZnO nanostructures (nanowires/nanorods) are attractive materials for applications such as gas sensors, biosensors, solar cells, and photocatalysts. This is due to the relatively easy production process of these kinds of nanostructures with excellent charge carrier transport properties and high crystalline quality. In this work, we review the photoluminescence (PL) properties of single and collective ZnO nanowires and nanorods. As different growth techniques were obtained for the presented samples, a brief review of two popular growth methods, vapor-liquid-solid (VLS) and hydrothermal, is shown. Then, a discussion of the emission process and characteristics of the near-band edge excitonic emission (NBE) and deep-level emission (DLE) bands is presented. Their respective contribution to the total emission of the nanostructure is discussed using the spatial information distribution obtained by scanning transmission electron microscopy−cathodoluminescence (STEM-CL) measurements. Also, the influence of surface effects on the photoluminescence of ZnO nanowires, as well as the temperature dependence, is briefly discussed for both ultraviolet and visible emissions. Finally, we present a discussion of the size reduction effects of the two main photoluminescent bands of ZnO. For a wide emission (near ultra-violet and visible), which has sometimes been attributed to different origins, we present a summary of the different native point defects or trap centers in ZnO as a cause for the different deep-level emission bands.

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Section: Properties Of Znomentioning

confidence: 99%

Section: Vapor-liquid-solid Techniquementioning

confidence: 99%

Photoluminescence of ZnO Nanowires: A Review

et al. 2020

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“…The chamber pressure was maintained at 9.3 × 10 −5 mbar, and a mass flow controller regulated the Ar gas (99.999%) flow rate. The sputtering process was performed similarly, as reported previously (Serrano et al, 2017 ). Deposition conditions for TCO were 45 W sputtering power, 5 sccm Ar flow for 12 min, and the substrate-target distance was 4 cm.…”

Section: Methodsmentioning

confidence: 99%

“…In early works, our research group has demonstrated broad control over the growth of ZnO NWs through the VLS method, where the effect of seed layer, vertical and random orientation of the NWs on the structural, morphological and optical properties have been analyzed. Moreover, we have reported the application of these ZnO NWs in bio-sensing and hydrogen production (Serrano et al, 2017 ; Galdamez et al, 2019 ; Galdámez-Martínez et al, 2020a ). Additionally, in previous work, we have reported the theoretical study of the absorption spectra of N719 dye together with the ZnO NWs, and it was found that a particular N719 group showed the best alignment of the bands for the better absorption, charge-transport mechanism, and rate of regeneration (Portillo-Cortez et al, 2019 ).…”

Section: Introductionmentioning

confidence: 99%

ZnO Nanowires/N719 Dye With Different Aspect Ratio as a Possible Photoelectrode for Dye-Sensitized Solar Cells

et al. 2021

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The vapor-liquid-solid (VLS) process was applied to fabricate zinc oxide nanowires (ZnO NWs) with a different aspect ratio (AR), morphological, and optical properties. The ZnO NWs were grown on a system that contains a quartz substrate with transparent conductive oxide (TCO) thin film followed by an Al-doped ZnO (AZO) seed layer; both films were grown by magnetron sputtering at room temperature. It was found that the ZnO NWs presented high crystalline quality and vertical orientation from different structural and morphological characterizations. Also, NWs showed a good density distribution of 69 NWs/μm2 with a different AR that offers their capability to be used as possible photoelectrode (anode) in potential future device applications. The samples optical properties were studied using various techniques such as photoluminescence (PL), absorption, and transmittance before and after sensitization with N719 dye. The results demonstrated that NW with 30 nm diameter had the best characteristics as feasible photoelectrode (anode) (high absorption, minimum recombination, high crystallinity). Also, the present samples optical properties were found to be improved due to the existence of N719 dye and Au nanoparticles on the tip of NWs. NWs grown in this work can be used in different photonic and optoelectronic applications.

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“…The sizeable binding exciton energy of ZnO (60 meV, nearly three times that of gallium nitride [30]) is responsible for the room temperature luminescence of this material, and it persists at temperatures as high as 700 K according to the literature [32]. Usually, the ratio between the integrated spectral intensity of NBE and DLE bands is used to estimate the contribution of recombination due to defect levels [33]. In ZnO nanostructures, the interaction between these bands becomes more complex because a high surface-volume ratio increases the density of surface defects, which strongly affects the processes of photoluminescence emission.…”

Section: Photoluminescence Studiesmentioning

confidence: 99%

Obtaining Nanostructured ZnO onto Si Coatings for Optoelectronic Applications via Eco-Friendly Chemical Preparation Routes

et al. 2021

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Although the research on zinc oxide (ZnO) has a very long history and its applications are almost countless as the publications on this subject are extensive, this semiconductor is still full of resources and continues to offer very interesting results worth publishing or warrants further investigation. The recent years are marked by the development of novel green chemical synthesis routes for semiconductor fabrication in order to reduce the environmental impacts associated with synthesis on one hand and to inhibit/suppress the toxicity and hazards at the end of their lifecycle on the other hand. In this context, this study focused on the development of various kinds of nanostructured ZnO onto Si substrates via chemical route synthesis using both classic solvents and some usual non-toxic beverages to substitute the expensive high purity reagents acquired from specialized providers. To our knowledge, this represents the first systematic study involving common beverages as reagents in order to obtain ZnO coatings onto Si for optoelectronic applications by the Aqueous Chemical Growth (ACG) technique. Moreover, the present study offers comparative information on obtaining nanostructured ZnO coatings with a large variety of bulk and surface morphologies consisting of crystalline nanostructures. It was revealed from X-ray diffraction analysis via Williamson–Hall plots that the resulting wurtzite ZnO has a large crystallite size and small lattice strain. These morphological features resulted in good optical properties, as proved by photoluminescence (PL) measurements even at room temperature (295 K). Good optical properties could be ascribed to complex surface structuring and large surface-to-volume ratios.

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Effect of the seed layer on the growth and orientation of the ZnO nanowires: Consequence on structural and optical properties

Cited by 22 publications

References 37 publications

Photoluminescence of ZnO Nanowires: A Review

Photoluminescence of ZnO Nanowires: A Review

ZnO Nanowires/N719 Dye With Different Aspect Ratio as a Possible Photoelectrode for Dye-Sensitized Solar Cells

Obtaining Nanostructured ZnO onto Si Coatings for Optoelectronic Applications via Eco-Friendly Chemical Preparation Routes

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