Effect of the oxidation temperature on microstructure and conductivity of ZnxNy thin films and their conversion into p-type ZnO:N films

Erdogan, N.H.; Kara, Kamuran; Ozdamar, H.; Esen, Ramazan; Kavak, Hamide

doi:10.1016/j.apsusc.2013.01.076

Cited by 28 publications

(9 citation statements)

References 32 publications

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“…The intensity is different from the result in Ref. [ 34 ] and indicates that the as-deposited film of this study has a good crystallinity. After the oxidation, the peak positions are obviously different from those of the as-deposited and exhibit the characters of ZnO.…”

Section: Resultscontrasting

confidence: 99%

Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film

Qin

Lin

et al. 2016

Nanoscale Res Lett

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Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that both long oxidation time and high oxidation temperature can obtain the film with a good transmittance (over 80 % for visible and infrared light) and a high carrier concentration. The N: ZnO film exhibits a special growth model with the oxidation time and is first to form a N: ZnO particle on the surface, then to become a N: ZnO layer, and followed by the inside Zn-N segregating to the surface to oxidize N: ZnO. The surface particle oxidized more adequately than the inside. However, the X-ray photoemission spectroscopy results show that the lower N concentration results in the lower N substitution in the O lattice (No). This leads to the formation of n-type N: ZnO and the decrease of carrier concentration. Thus, this method can be used to tune the microstructure, optical transmittance, and electrical properties of the N: ZnO film.

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Section: Resultscontrasting

confidence: 99%

Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film

Qin

Lin

et al. 2016

Nanoscale Res Lett

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“…This is consistent with previous observations of ZnO films prepared by thermal oxidation of Zn. 38,39 For the Zn film deposited by sputtering for 2 min and 30 s, the amorphous XRD pattern, in spite of the presence of three small and narrow peaks corresponding to ZnO, is due to scattering by the glass substrate of the x-rays penetrating through the film. However, when the Zn sputtering time is increased, wurtzite peaks are observed in addition to the amorphous background of the glass substrate located between 20°and 40°.…”

Section: Methodsmentioning

confidence: 98%

Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

Bouanane

Kabir

Boulainine

et al. 2016

Journal of Elec Materi

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Zinc oxide thin films were prepared by thermal oxidation of zinc films at a temperature of 500°C for 2 h. The Zn films were deposited onto glass substrates by magnetron RF sputtering. The sputtering time varied from 2.5 min to 15 min. The physico-chemical characterization of the ZnO films was carried out depending on the Zn sputtering time. According to x-ray diffraction, ZnO films were polycrystalline and the Zn-ZnO phase transformation was direct. The mean transmittance of the ZnO films was around 80% and the band gap increased from 3.15 eV to 3.35 eV. Photoluminescence spectra show ultraviolet, visible, and infrared emission bands. The increase of the UV emission band was correlated with the improvement of the crystalline quality of the ZnO films. The concentration of native defects was found to decrease with increasing Zn sputtering time. The decrease of the electrical resistivity as a function of Zn sputtering time was linked to extrinsic hydrogen-related defects.

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“…One of the attractive nitrides is Zn 3 N 2 [13], whose biggest advantage is its high electron mobility, which exceeds 100 cm 2 V −1 s −1 [14][15][16][17] (the record is 395 cm 2 V −1 s −1 [15]). There have been reports suggesting the use of Zn 3 N 2 as transparent conductors [18], channel layers for optoelectronic devices [19], negative electrodes in Li-ion batteries [20], and precursor films for p-type doped ZnO [21]. Thus far, Zn 3 N 2 samples have been synthesized using various techniques, such as pulsed-laser deposition [22,23], molecular beam epitaxy [15,16,24], chemical vapor deposition [16,25], electrochemical processes [26], sputtering [17,[27][28][29][30], and ammonolysis reactions [31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Carrier-Induced Band-Gap Variation and Point Defects in Zn3N2 from First Principles

et al. 2017

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The zinc nitride Zn 3 N 2 is composed of inexpensive and earth-abundant Zn and N elements and shows high electron mobility exceeding 100 cm 2 V −1 s −1 . Although various technological applications of Zn 3 N 2 have been suggested so far, the synthesis of high-quality Zn 3 N 2 samples, especially single crystals, is still challenging, and therefore its basic properties are not yet well understood. Indeed, the reported band gaps of as-grown Zn 3 N 2 widely scatter from 0.85 to 3.2 eV. In this study, we investigate the large gap variation of Zn 3 N 2 in terms of the Burstein-Moss (BM) effect and point-defect energetics using first-principles calculations. First, we discuss the relation between electron carrier concentration and optical gaps based on the electronic structure obtained using the Heyd-Scuseria-Ernzerhof hybrid functional. The calculated fundamental band gap is 0.84 eV in a direct-type band structure. Second, thermodynamic stability of Zn 3 N 2 is assessed using the ideal-gas model in conjunction with the rigid-rotor model for gas phases and firstprinciples phonon calculations for solid phases. Third, carrier generation and compensation by native point defects and unintentionally introduced oxygen and hydrogen impurities are discussed. The results suggest that a significant BM shift occurs mainly due to oxygen substitutions on nitrogen sites and hydrogen interstitials. However, gaps larger than 2.0 eV would not be due to the BM shift because of the Fermi-level pinning caused by acceptorlike zinc vacancies and hydrogen-on-zinc impurities. Furthermore, we discuss details of peculiar defects such as a nitrogen-on-zinc antisite with azidelike atomic and electronic structures.

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Effect of the oxidation temperature on microstructure and conductivity of ZnxNy thin films and their conversion into p-type ZnO:N films

Cited by 28 publications

References 32 publications

Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film

Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film

Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

Carrier-Induced Band-Gap Variation and Point Defects in Zn3N2 from First Principles

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