Effect of the junction barrier on current–voltage distortions in the Sb2Se3/Zn(O,S) solar cells

Gharibshahian, Iman; Orouji, Ali A.; Sharbati, Samaneh

doi:10.1016/j.optmat.2021.111098

Cited by 25 publications

(9 citation statements)

References 43 publications

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“…When selecting an optimal HRMO interlayer, the quality of newly generated interfaces must also be carefully considered. Defective interfaces and nonideal band alignment at the front contact can result in the formation of energy barriers for electron transfer and increased recombination [8d,24] . Charge transport in solar cells is highly influenced by these barriers, and can lead to anomalies in the JV characteristics of a solar cell, such as cross‐over between dark and illuminated curves as well as kinks and roll‐over in the dark or light JV curves, ultimately reducing device lifetime and efficiency [13d,16] …”

Section: Resultsmentioning

confidence: 99%

High‐Resistance Metal Oxide Window Layers for Optimal Front Contact Interfaces in Sb₂Se₃ Solar Cells

2022

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Herein, an in‐depth experimental investigation into the effect of employing different high resistance metal oxide (HRMO) layers on the quality of the front contact in solar cells with an fluorine‐doped tin oxide (FTO)/(HRMO)/CdS/Sb2Se3/Au device architecture is presented. The application of ZnO or TiO2 HRMO layers between FTO substrates and CdS improves the overall device performance. Short‐circuit current gains of ≈20%, orders of magnitude higher shunt resistances (≈104 Ω cm2), and greatly improved device stabilities—maintaining over 95% of their initial efficiency over 137 days are observed. A suppression of the unfavorable (120) orientation of the photoactive Sb2Se3 layer is observed in devices with HRMO interlayers. The application of HRMO layers is crucial to prevent both ohmic and non‐ohmic current leaks and maintain device stability over time. Cross‐over in the current‐voltage (JV) curves observed in the case of TiO2 indicates the presence of a high barrier for the diode current in these devices. Wavelength‐dependent JV curves coupled with capacitance measurements and simulations show that this barrier can be attributed to a high density of interfacial acceptor states. In contrast, ZnO deposition is found to reduce interface defects and enhance the quality of the front contact, while boosting performance and increasing device longevity.

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Section: Resultsmentioning

confidence: 99%

High‐Resistance Metal Oxide Window Layers for Optimal Front Contact Interfaces in Sb₂Se₃ Solar Cells

2022

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“…Double buffer layers, e.g. , TiO 2 /CdS, 119,120 SnO 2 /CdS, 120,121 Zn(O,S)/CdS, 103,122,123 ZnSnO 3 /CdS, 5 Mg:SnO 2 /CdS, 94 and ZnO/TiO 2 , 124 successfully suppresses the shunt paths and improve the cascaded band-alignment for efficient carrier transport. Han et al 125 demonstrated the synergistic role of zinc halide (ZnCl 2 , ZnBr 2 , and ZnI 2 ) treatment of TiO 2 in modifying the TiO 2 layer and TiO 2 /Sb 2 S 3 interface.…”

Section: Strategies Toward High Pce Sb2x3 Solar Cellsmentioning

confidence: 99%

A comprehensive insight into deep-level defect engineering in antimony chalcogenide solar cells

Barthwal,

Singh,

Chauhan

et al. 2023

Mater. Adv.

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“…Recent studies suggest that Cd diffusion is likely responsible for the J-V degradation and unsatisfactory illumination observed in the Sb 2 Se 3 /CdS solar cells. [9] Experimental findings have shown that Sb 2 Se 3 absorber properties near the interface with the CdS buffer layer change dramatically, [3,5,9,23,[25][26][27][28] leading to the current-voltage (J-V) distortion [29] and degradation of the fill factor (FF). [30] This degradation can be attributed to the deep trapping of electrons and atomic diffusion at the absorber/buffer interface, which is detrimental to Sb 2 Se 3 solar cell operation.…”

Section: Introductionmentioning

confidence: 99%

“…Highly defective Sb 2 Se 3 has band tail states that enhance the interface defect density, potentially causing lower performance. [25] Therefore, inter-diffusion is a significant limitation on the performance of Sb 2 Se 3 /CdS solar cells, causing severe J-V distortions [29] and illumination instability. [6] Similar behavior has been observed in other solar cells, such as CIGS, [31] CdTe [32] and CZTS [33] solar cells, leading to J-V distortion.…”

Section: Introductionmentioning

confidence: 99%

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An Analytical Model for Sb₂Se₃ Thin‐Film Solar Cells by Considering Current‐Voltage Distortion

Gharibshahian

Orouji

Sharbati

2022

Advcd Theory and Sims

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Antimony selenide (Sb2Se3) solar cells often demonstrate current–voltage (J–V) distortion at low temperature, particularly at reverse bias or under red‐light irradiation. A highly doped p‐type (HDP) thin layer between the buffer and absorber layers is typically supposed to induce the J–V distortion. In this work, an analytical model for the experimental Sb2Se3 solar cell has been presented to investigate the effect of the HDP layer characteristics on the J–V distortion. This proposed model can also calculate the critical voltage at which the J–V distortion occurs. The results show that the Sb2Se3 solar cells with the HDP layer have low efficiency when doping concentration and thickness of the HDP layer increase due to a large J–V distortion. This study confirms that the presence of an electron barrier in the conduction band formed by the HDP layer can cause J–V distortion. Hence, the effect of electron barrier height on cell performance based on the derived formulas is investigated. Finally, comparing the simulation and modeling results with variations of the physical and electrical properties of the HDP layer provides a good evaluation for understanding the behavior of Sb2Se3 solar cells.

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Effect of the junction barrier on current–voltage distortions in the Sb2Se3/Zn(O,S) solar cells

Cited by 25 publications

References 43 publications

High‐Resistance Metal Oxide Window Layers for Optimal Front Contact Interfaces in Sb₂Se₃ Solar Cells

High‐Resistance Metal Oxide Window Layers for Optimal Front Contact Interfaces in Sb₂Se₃ Solar Cells

A comprehensive insight into deep-level defect engineering in antimony chalcogenide solar cells

An Analytical Model for Sb₂Se₃ Thin‐Film Solar Cells by Considering Current‐Voltage Distortion

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Effect of the junction barrier on current–voltage distortions in the Sb2Se3/Zn(O,S) solar cells

Cited by 25 publications

References 43 publications

High‐Resistance Metal Oxide Window Layers for Optimal Front Contact Interfaces in Sb2Se3 Solar Cells

High‐Resistance Metal Oxide Window Layers for Optimal Front Contact Interfaces in Sb2Se3 Solar Cells

A comprehensive insight into deep-level defect engineering in antimony chalcogenide solar cells

An Analytical Model for Sb2Se3 Thin‐Film Solar Cells by Considering Current‐Voltage Distortion

Contact Info

Product

Resources

About

High‐Resistance Metal Oxide Window Layers for Optimal Front Contact Interfaces in Sb₂Se₃ Solar Cells

High‐Resistance Metal Oxide Window Layers for Optimal Front Contact Interfaces in Sb₂Se₃ Solar Cells

An Analytical Model for Sb₂Se₃ Thin‐Film Solar Cells by Considering Current‐Voltage Distortion