Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage

Hsueh, Kan‐Lin; Chang, Yi-Sheng; Li, B. H.; Wang, Hsiang-Chun; Hu, Chih‐Wei; Xuan, Rong

doi:10.1016/j.mssp.2018.10.013

Cited by 19 publications

(7 citation statements)

References 20 publications

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“…In addition, a turn-on voltage V ON of 0.91 V has been obtained at a forward current density of 1 A/cm 2 from Figure 3a. 26 These extracted I−V parameters compare favorably with those obtained from Schottky contacts made on sputter-deposited amorphous gallium−indium−zinc oxide thin films. 27 The assumption of low doping can be verified by carrying out C−V measurements on the same test device to determine the free carrier concentration N. At a detection signal frequency of 100 kHz, the measured diode capacitance is given in Figure 4 as a plot of A 2 /C 2 versus V which conveniently allows the determination of N by applying Mott−Schottky theory.…”

Section: Acs Applied Electronic Materialssupporting

confidence: 55%

“…This consistently reproducible value of the ideality factor is outstanding for a solution-processed ZnO film and even for vapor-deposited ZnO films. , It unequivocally attests to the high quality of the electrodeposited film. In addition, a turn-on voltage V ON of 0.91 V has been obtained at a forward current density of 1 A/cm 2 from Figure a . These extracted I–V parameters compare favorably with those obtained from Schottky contacts made on sputter-deposited amorphous gallium–indium–zinc oxide thin films …”

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confidence: 61%

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High Breakdown Strength Schottky Diodes Made from Electrodeposited ZnO for Power Electronics Applications

Benlamri

Wiltshire

Zhang

et al. 2019

ACS Appl. Electron. Mater.

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The synthesis of ZnO films by optimized electrodeposition led to the achievement of a critical electric field of 800 kV/cm. This value, which is 2−3 times higher than in monocrystalline silicon, was derived from a vertical Schottky diode application of columnar-structured ZnO films electrodeposited on platinum. The device exhibited a free carrier concentration of 2.5 × 10 15 cm −3 , a rectification ratio of 3 × 10 8 , and an ideality factor of 1.10, a value uncommonly obtained in solution-processed ZnO. High breakdown strength and high thickness capability make this environment-friendly process a serious option for power electronics and energy harvesting.

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Section: Acs Applied Electronic Materialssupporting

confidence: 55%

supporting

confidence: 61%

High Breakdown Strength Schottky Diodes Made from Electrodeposited ZnO for Power Electronics Applications

Benlamri

Wiltshire

Zhang

et al. 2019

ACS Appl. Electron. Mater.

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“…An additional reduction of the R ON,SP could be achieved by a thinner or a smaller overlap of the p-GaN layer [14]. And the V On could be further lowered through the optimization of the device structure [11,13]. Meanwhile, compared with other works, the BV = 665 V and BFOM = 461 MW cm −2 in the PG-LFER still have room for improvement.…”

Section: Device Characteristics and Discussionmentioning

confidence: 98%

“…Through the optimization design, the LFERs could maintain both low turn-on voltage (V On ) and high reverse blocking capability [9]. Several works have reported the realization of the LFERs compatible with p-GaN gate high-electronmobility transistor (HEMT) technology [10][11][12][13][14]. The p-GaN layer above the AlGaN barrier could deplete the 2DEG channel under the anode terminal [15], leading to the positive V On of the p-GaN gated devices.…”

Section: Introductionmentioning

confidence: 99%

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

Wang¹,

Chen²,

Wang³

et al. 2021

Semicond. Sci. Technol.

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In this paper, we designed a low turn-on voltage (V On) AlGaN/GaN lateral field-effect rectifier (LFER) compatible with p-GaN gate high-electron-mobility transistor (HEMT) technology (PG-LFER). We also established an analytical model on the gated control two-dimensional-electron-gas density (n S) distributions and V On to investigate the underlying mechanism. The designed PG-LFER features a p-GaN charge storage layer (CSL) under the anode terminal. Net negative charge density in the p-GaN CSL (σ p-GaN) is associated with the activated doping concentration of p-GaN CSL (N p-GaN) and p-GaN CSL thickness (t p-GaN). V On of the PG-LFER is significantly lowered due to the low σ p-GaN caused by reducing the N p-GaN and t p-GaN. Meanwhile, the low V On PG-LFER also preserves recognizable reverse blocking and capacitance characteristics. Verified by the calibrated simulation, the designed PG-LFER shows 70% lower V On compared with the non-optimized LFER with a high σ p-GaN. Compatible with p-GaN gate HEMT technology, the designed PG-LFER with improved performance is a promising candidate for power integrated applications.

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“…In 2019, Hsueh et al [55] proposed a hybrid-anode AlGaN/GaN heterojunction SBD using a PN junction barrier to deplete 2DEG, as shown in figure 4(f). They introduced P-GaN below the Schottky metal to form a PN junction barrier with the AlGaN barrier layer.…”

Section: Pn Junction Terminationmentioning

confidence: 99%

Research progress and prospect of GaN Schottky diodes

Shao,

Zhang,

et al. 2023

J. Phys. D: Appl. Phys.

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GaN (gallium nitride), as a third-generation semiconductor (wide-band semiconductor) material, is widely used in the fabrication of power devices with an excessive breakdown voltage and a low on-resistance due to the material’s excellent properties. Starting from the three basic structures, this paper analyses and summarizes the research progress of GaN SBD (schottky barrier diode) in recent years. The design and optimization methods of GaN-based SBD are introduced from various aspects, such as anode structure, termination type, epitaxial structure and substrate. The advantages and disadvantages of GaN-based SBD of different structures and the problems in the research process are summarized, and the future application fields of GaN-based SBD devices are prospected.

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Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage

Cited by 19 publications

References 20 publications

High Breakdown Strength Schottky Diodes Made from Electrodeposited ZnO for Power Electronics Applications

High Breakdown Strength Schottky Diodes Made from Electrodeposited ZnO for Power Electronics Applications

A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology

Research progress and prospect of GaN Schottky diodes

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