Effect of tensile and compressive strains on the transport properties of SmNiO3 layers epitaxially grown on (001) SrTiO3 and LaAlO3 substrates

Conchon, Florine; Boulle, Alexandre; Guinebretière, René; Girardot, C.; Pignard, S.; Kreisel, J.; Weiss, F.; Dooryhée, E.; Hodeau, Jean-Louis

doi:10.1063/1.2800306

Cited by 77 publications

(61 citation statements)

References 18 publications

(6 reference statements)

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“…Previously, the resistance modulation of bulk nickelates was achieved by adjusting the degree of oxygen deficiency during synthesis [31][32][33] . Recently, suppression or enhancement of the metallic phase of the nickelates was realized by introducing either tensile or compressive strain, which is believed to be able to regulate the Ni 3 þ /Ni 2 þ ratio [34][35][36] . The resistance modification from both methods is permanent and irreversible.…”

Section: Resultsmentioning

confidence: 99%

A correlated nickelate synaptic transistor

et al. 2013

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Inspired by biological neural systems, neuromorphic devices may open up new computing paradigms to explore cognition, learning and limits of parallel computation. Here we report the demonstration of a synaptic transistor with SmNiO 3 , a correlated electron system with insulator-metal transition temperature at 130°C in bulk form. Non-volatile resistance and synaptic multilevel analogue states are demonstrated by control over composition in ionic liquid-gated devices on silicon platforms. The extent of the resistance modulation can be dramatically controlled by the film microstructure. By simulating the time difference between postneuron and preneuron spikes as the input parameter of a gate bias voltage pulse, synaptic spike-timing-dependent plasticity learning behaviour is realized. The extreme sensitivity of electrical properties to defects in correlated oxides may make them a particularly suitable class of materials to realize artificial biological circuits that can be operated at and above room temperature and seamlessly integrated into conventional electronic circuits.

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Section: Resultsmentioning

confidence: 99%

A correlated nickelate synaptic transistor

et al. 2013

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“…Epitaxial growth of pure NdNiO 3 films on a variety of substrates has shown a renormalization of T MI with respect to the bulk, that is, T MI is increased (decreased) by tensile (compressive) in-plane strain, an effect which is attributed to an increase (decrease) of the Ni-O-Ni, bond angle which affects films in the same way as the bulk. [9][10][11][12][13][14] Alternatively, it has been suggested that tensile in-plane stress may lead to a novel breathing distortion that creates two inequivalent Ni sites; charge transfer between these sites increases T MI.…”

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confidence: 99%

“…In this work, we study such alloyed films grown in registry with LaAlO 3 (001) substrates (pseudocubic indexing is used throughout), providing low-defect films with a homogeneous compressive strain; in addition, we use sample preparation aimed to avoid oxygen vacancies. 9 We characterize the transport, structural, and electronic properties of the films using resistivity measurements, synchrotron diffraction crystal truncation rod data, and x-ray absorption spectroscopy. From this, we produce an electronic phase diagram for thin films resembling that of the bulk, but with lower transition temperatures (renormalization) due to the effect of epitaxial strain.…”

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confidence: 99%

Phase diagram of compressively strained nickelate thin films

et al. 2013

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The complex phase diagrams of strongly correlated oxides arise from the coupling between physical and electronic structure. This can lead to a renormalization of the phase boundaries when considering thin films rather than bulk crystals due to reduced dimensionality and epitaxial strain. The well-established bulk RNiO3 phase diagram shows a systematic dependence between the metal-insulator transition and the perovskite A-site rare-earth ion, R. Here, we explore the equivalent phase diagram for nickelate thin films under compressive epitaxial strain. We determine the metal-insulator phase diagram for the solid solution of Nd1-yLayNiO3 thin films within the range 0 ≤ y ≤ 1. We find qualitative similarity between the films and their bulk analogs, but with an overall renormalization in the metal-insulator transition to lower temperature. A combination of x-ray diffraction measurements and soft x-ray absorption spectroscopy indicates that the renormalization is due to increased Ni–O bond hybridization for coherently strained thin films.

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“…From the released literatures, it was found that the transport behavior of RNiO 3 films varied strongly as a function of preparation conditions, 15,16 substrate, [17][18][19][20][21] and film thickness 22, 23 as well. Especially, by virtue of epitaxial strain the MIT could be actively tuned in the films, while both suppressed 11,20 and enhanced 5 T MI induced by tensile strain have been reported.…”

Section: Introductionmentioning

confidence: 98%

Controlling the sharpness of room-temperature metal-insulator transition in epitaxial Sm0.5Nd0.5NiO3 films

et al. 2013

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Sm0.5Nd0.5NiO3 (SNNO) films with metal-insulator transition (MIT) at room-temperature (∼300 K) have been grown on NdGaO3 (001) substrates by pulsed laser deposition. By modifying the parameters of oxygen pressure, substrate temperature, and film thickness, the role of oxygen vacancies and strain relaxation on the MIT of SNNO films was systematically analyzed. The strain status of the films was carefully characterized by means of high resolution x-ray diffraction. The results revealed that for the fully strained films (≤20 nm) an increment of deposition oxygen pressure (and/or temperature) would decrease the content of oxygen vacancies and Ni2+ in the films, leading to a sharp MIT. In contrast, the strain relaxation occurs in the thicker films (>20 nm) despite an optimized oxygen pressure (temperature) was adapted for the deposition, which results in an inferior transport property and surface morphology. Specifically, a broadening MIT and a doublet TMI was observed in the partially strained films, where one TMI kept a stable value around 300 K in analogues to that of fully strained film, and another one increased with the increment of the film thickness, reaching a highest value of 330 K. This might be induced by the coexistence of a fully strained part and a strain-relaxed portion in the thicker films that observed on high resolution X-ray reciprocal space mappings

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Effect of tensile and compressive strains on the transport properties of SmNiO3 layers epitaxially grown on (001) SrTiO3 and LaAlO3 substrates

Cited by 77 publications

References 18 publications

A correlated nickelate synaptic transistor

A correlated nickelate synaptic transistor

Phase diagram of compressively strained nickelate thin films

Controlling the sharpness of room-temperature metal-insulator transition in epitaxial Sm0.5Nd0.5NiO3 films

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