Effect of temperature on the performance analysis of MLGNR interconnects

Kaur, Tajinder; Kumar, Mayank; Khanna, Rajesh

doi:10.1007/s10825-018-01297-w

Cited by 20 publications

(8 citation statements)

References 41 publications

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“…The distributed scattering resistance R ds exists only when the interconnect length L gnr is larger than the effective mean free path (MFP) λ eff . They can be expressed as [32],…”

Section: Electrical Modeling Of Mlgnr Interconnects a Two-line Cmentioning

confidence: 99%

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Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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Based on transmission line modeling, a new technology of collaborative applying the ultralow-k dielectric and the high-k dielectric materials in coupled multilayer graphene nanoribbon (MLGNR) interconnects (i.e., case 4) to reduce propagation delay and to expand 3-dB bandwidth of the conventional pristine (undoped) MLGNR interconnects is proposed in this paper. By using the decoupling technique and ABCD parameter matrix approach, the transfer function of the equivalent circuit model for coupled MLGNR interconnects is derived to obtain step response, propagation delay, transfer gain and 3-dB bandwidth under in-phase and out-of-phase crosstalk modes at global level of 7.5 nm technology node, which is based on the defined four cases. The results show that the maximum reduction of propagation delay between the proposed new technology (case 4) and the conventional MLGNR interconnects (case 1) can reach 15.911 ns at out-of-phase crosstalk mode for an interconnect length of 4000 µm. The corresponding 3-dB bandwidth for them can be expanded over 2.978 times in the same length as the former. It is demonstrated that the proposed case 4 can obviously reduce the propagation delay and enhance the transfer gain and 3-dB bandwidth compared with the conventional case 1. Moreover, it is found that the coupled MLGNR interconnect under in-phase mode outperform that under out-of-phase mode in terms of propagation delay, transfer gain and 3-dB bandwidth at the same condition. In addition, it is manifested that the victim line of two-line coupled MLGNR interconnects have lesser propagation delay, higher transfer gain and larger 3-dB bandwidth, as compared to three-line coupled MLGNR interconnects at the same case. The proposed new technology in this paper would be beneficial to improve the performance of MLGNR interconnects and to provide the guidelines for the design of next generation on-chip MLGNR interconnect system. INDEX TERMS MLGNR interconnects, step response, propagation delay, transfer gain, 3-dB bandwidth, ultra-low-k dielectric, high-k dielectric. I. INTRODUCTION With the continuous advancement of semiconductor manufacturing technology in very large-scale integrated (VLSI) circuits, a series of performance degradation on the conventional copper (Cu) based interconnects have been reported, such as the larger resistivity, electro-migration and smaller

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“…The distributed scattering resistance R ds exists only when the interconnect length L gnr is larger than the effective mean free path (MFP) λ eff . They can be expressed as [32],…”

Section: Electrical Modeling Of Mlgnr Interconnects a Two-line Cmentioning

confidence: 99%

“…The p.u.l. equivalent quantum capacitance C eq can be solved by applying a recursive method as follows [11], [32], [35], [42],…”

Section: Electrical Modeling Of Mlgnr Interconnects a Two-line Cmentioning

confidence: 99%

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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“…Hence, doped‐MLGNR interconnects (ac‐edges), with their minimum resistance (see Figure ) in comparison to other MLGNR interconnects (undoped MLGNR with both the ac and zz‐edges and doped MLGNR with zz‐edges), for temperature within the interval 300–500 K (as indicated in Section ), possess lower propagation delay. Also, the results of MLGNR are compared with the best structure of MCBs, i.e., MCB‐1 at the same technology node (≈14 nm). It can be noted that both the doped MLGNR (zz and ac) kept their advantage in terms of superior delay performance than MCB‐1.…”

Section: Temperature‐dependent Crosstalk Analysismentioning

confidence: 99%

“…The temperature‐dependent crosstalk‐induced delay at the remote end of the aggressor line, in coupled MLGNR and MCB (MCB‐1) interconnects, is shown in Figure . The corresponding values of the circuit parameters, i.e., R, L, C, and C C for coupled interconnects based on MCB are calculated using the appropriate expressions available in the literature . These results are obtained under dynamic switching, i.e., the aggressor is switched from logic 0 to 1, and the victim is switched in phase with the aggressor, i.e., from logic 0 to 1 .…”

Section: Temperature‐dependent Crosstalk Analysismentioning

confidence: 99%

Analysis of Temperature‐Dependent Functional and Dynamic Crosstalk Noise in Adjacent Interconnects of Doped Multilayer Graphene Nanoribbon with Armchair and Zigzag Edges

Kaur

Kumar

Khanna

2019

Physica Status Solidi (a)

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Multilayer graphene nanoribbon (MLGNR) is a potential candidate in nanoscale very large scale integration (VLSI) interconnects. A detailed analysis emphasizing the impact of GNR's edge shape in an armchair (ac) and zigzag (zz) structures on crosstalk performance considering undoped and doped (intercalated with AsF 5 and FeCl 3 ) MLGNR interconnects is presented. A capacitively-coupled driver-interconnect-load (DIL) line configuration is used to analyze both the functional and dynamic crosstalk at 14 nm technology node for global interconnects. A temperature-dependent equivalent single conductor (TD-ESC) model is considered. It is observed that over a temperature range from 300 to 500 K, crosstalk-induced low noise peaks in doped MLGNRs are obtained with zz-edges as compared with undoped MLGNR, whereas, the time duration of crosstalk-induced noise is small for doped MLGNRs with ac-edges. Similar findings are obtained in terms of propagation delay and crosstalk-induced delay for single and coupled interconnects, respectively, that is, the delays obtained in both kinds are small for doped MLGNR with ac-edges. It is also observed that AsF 5 -doped MLGNR outperforms FeCl 3 -doped MLGNR in terms of crosstalk-induced noise and delay. The results of MLGNR are also compared with the mixed carbon-nanotube bundle (MCB).

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“…Graphene nanoribbon (GNR) is a narrow strip of graphene sheet, which can be classified into multilayer GNR (MLGNR) and single-layer GNR (SLGNR) depending on its stacked number of layers. SLGNR is not suitable for on-chip interconnects owing to its larger intrinsic resistance [7][8][9]. Based on the types of connection with other devices or interconnects, MLGNR can be further categorized into top contact MLGNR (TC-MLGNR) and side contact MLGNR (SC-MLGNR) [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

Tang

2019

Electronics

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The ultra-low-k dielectric material replacing the conventional SiO2 dielectric medium in coupled multilayer graphene nanoribbon (MLGNR) interconnects is presented. An equivalent distributed transmission line model of coupled MLGNR interconnects is established to derive the analytical expressions of crosstalk delay, transfer gain, and noise output for 7.5 nm technology node at global level, which take the in-phase and out-of-phase crosstalk into account. The results show that by replacing the SiO2 dielectric mediums with the nanoglass, the maximum reduction of delay time and peak noise voltage are 25.202 ns and 0.102 V for an interconnect length of 3000 µm, respectively. It is demonstrated that the ultra-low-k dielectric materials can significantly reduce delay time and crosstalk noise and increase transfer gain compared with the conventional SiO2 dielectric medium. Moreover, it is found that the coupled MLGNR interconnect under out-of-phase mode has a larger crosstalk delay and a lesser transfer gain than that under in-phase mode, and the peak noise voltage increases with the increase of the coupled MLGNR interconnect length. The results presented in this paper would be useful to aid in the enhancement of performance of on-chip interconnects and provide guidelines for signal characteristic analysis of MLGNR interconnects.

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Effect of temperature on the performance analysis of MLGNR interconnects

Cited by 20 publications

References 41 publications

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Analysis of Temperature‐Dependent Functional and Dynamic Crosstalk Noise in Adjacent Interconnects of Doped Multilayer Graphene Nanoribbon with Armchair and Zigzag Edges

The Ultra-Low-k Dielectric Materials for Performance Improvement in Coupled Multilayer Graphene Nanoribbon Interconnects

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