Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge

Bosi, Matteo; Attolini, G.; Ferrari, C.; Frigeri, C.; Calicchio, M.; Rossi, Francesca; Vad, K.; Csík, A.; Zolnai, Zsolt

doi:10.1016/j.jcrysgro.2010.10.101

Cited by 22 publications

(16 citation statements)

References 17 publications

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“…The use of AsH 3 has a strong effect on the Ge growth [7][8][9]. In our growth processes we found that even a small addition of some sccm of AsH 3 in the gas phase along with iBuGe is able to reduce the growth rate up to 10 times.…”

Section: Resultsmentioning

confidence: 64%

Epitaxial growth and electrical characterization of germanium

Bosi

Attolini

Ferrari

et al. 2011

Cryst. Res. Technol.

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Vertical mesa junctions were obtained on the above structures by using conventional photolithographic and evaporation techniques. The junctions were characterized by I-V measurements under dark and illumination conditions and by EBIC technique. It has been observed that the samples grown at lower temperature showed better rectifying I-V characteristics and light conversion efficiency while EBIC results may suggest that a high As diffusion is present in the samples grown at higher temperature.

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Section: Resultsmentioning

confidence: 64%

Epitaxial growth and electrical characterization of germanium

Bosi

Attolini

Ferrari

et al. 2011

Cryst. Res. Technol.

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“…It is possible that there are {1 1 1} facetted dips of the Ga and/or As diffusion into the Ge substrate during growth. These phenomena are governed by temperature [13][14][15].…”

Section: One-step Growthmentioning

confidence: 99%

“…To improve the crystal quality of the GaAs buffer layer, a two-step growth is a key process, where the GaAs buffer layer is grown at a low temperature and then continued with a high temperature. At a low growth temperature of 475-530 1C, a GaAs nucleation layer acts as a diffusion barrier to prevent Ge outdiffusion from the Ge substrate surface during the high temperature growth at 600-700 1C [9,[13][14][15][16]. As a result, to propose the GaAs layer to be a part of buffer layer for the InGaAsN solar-cell structure on Ge substrate, further optimization of the GaAs growth conditions is needed.…”

Section: Introductionmentioning

confidence: 99%

Influences of two-step growth and off-angle Ge substrate on crystalline quality of GaAs buffer layers grown by MOVPE

Wanarattikan

Sanorpim

Denchitcharoen

et al. 2015

Journal of Crystal Growth

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“…The high quality GaAs films grown on Ge substrates are crucial important for the performances of these devices. Even though the mismatches of lattice constants and thermal expansion coefficients between GaAs and Ge are negligible, challenges remain in growing GaAs directly on Ge substrate [2], mainly due to the formation of anti-phase domains (APDs) when polar materials GaAs grown on nonpolar materials Ge [5,6], and the atomic interdiffusion near the GaAs/Ge interface [1,[7][8][9]. For the former, it has been well established that under proper growth conditions, the APDs can be eliminated by the adoption of off-cut Ge substrates [10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%