Effect of temperature on graphene grown by chemical vapor deposition

Chaitoglou, Stefanos; Bertran, Enric

doi:10.1007/s10853-017-1054-1

Cited by 59 publications

(44 citation statements)

References 25 publications

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“…AFM was utilized to obtain hight measurements for the ripples; the temperature showed no significant effect on the geometry of the ripples. However, the measured step height gave a value of 5 nm, which is in agreement with the calculated depth value using the model of Mullins (Figure 30) [78]. In a previous article, AFM was utilized to study the nature of hexagonal domains on the surface of graphene film grown using APCVD on liquid Cu substrate and using Mo as the crucible material; these hexagons were absent in the case of using W as the crucible material.…”

Section: Afm Modessupporting

confidence: 83%

“…At higher temperatures, the graphene growth rate rapidly increased (144 μm 2 /20 min at 970 °C compared to 1369 μm 2 /20 min at 1070 °C) ( Figure 7b). Analysis plots showing (a) nucleation density versus growth temperature, (b) nucleus growth rate versus growth temperature (reprinted with permission from [78]).…”

Section: Role Of Growth Temperaturementioning

confidence: 99%

“…The investigated growth temperature varied from 1000 to 1060 °C; multilayer graphene regions were grown at 1000 °C while the nucleation density was Figure 7. Analysis plots showing (a) nucleation density versus growth temperature, (b) nucleus growth rate versus growth temperature (reprinted with permission from [78]).…”

Section: Role Of Growth Temperaturementioning

confidence: 99%

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Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review

et al. 2020

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Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

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Section: Afm Modessupporting

confidence: 83%

Section: Role Of Growth Temperaturementioning

confidence: 99%

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Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review

et al. 2020

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“…Therefore, it should instead result in a decrease in the I 2D /I G ratio with temperature. On the other hand, the desorption rate of carbon atoms increases with temperature, as reported in [ 52 ]. This can be a cause of the decrease in the number of graphene layers with increased deposition temperature.…”

Section: Discussionmentioning

confidence: 57%

“…Notably, the decrease in the number of graphene layers with increasing process time can be explained by the hydrogen etching prevailing over the growth of additional graphene layers as it was reported in [ 52 ].…”

Section: Discussionmentioning

confidence: 64%

Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures

et al. 2020

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In this study, graphene was synthesized on the Si(100) substrates via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD). Protective enclosures were applied to prevent excessive plasma etching of the growing graphene. The properties of synthesized graphene were investigated using Raman scattering spectroscopy and atomic force microscopy. Synthesis time, methane and hydrogen gas flow ratio, temperature, and plasma power effects were considered. The synthesized graphene exhibited n-type self-doping due to the charge transfer from Si(100). The presence of compressive stress was revealed in the synthesized graphene. It was presumed that induction of thermal stress took place during the synthesis process due to the large lattice mismatch between the growing graphene and the substrate. Importantly, it was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave PECVD process.

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Kinetics of Graphene and 2D Materials Growth

2018

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During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment‐limited growth and diffusion‐limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double‐layer and few‐layer 2D materials' growth, which has distinct features different from the growth of single‐layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.

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Effect of temperature on graphene grown by chemical vapor deposition

Cited by 59 publications

References 25 publications

Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review

Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review

Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures

Kinetics of Graphene and 2D Materials Growth

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