Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures

Abstract

In this study, graphene was synthesized on the Si(100) substrates via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD). Protective enclosures were applied to prevent excessive plasma etching of the growing graphene. The properties of synthesized graphene were investigated using Raman scattering spectroscopy and atomic force microscopy. Synthesis time, methane and hydrogen gas flow ratio, temperature, and plasma power effects were considered. The synthesized graphene exhibited n-type self-doping due to the charge transfer from Si(100). The presence of compressive stress was revealed in the synthesized graphene. It was presumed that induction of thermal stress took place during the synthesis process due to the large lattice mismatch between the growing graphene and the substrate. Importantly, it was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave PECVD process.

Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC

“…The polarization states of O light and E light in the crystal are expressed in Equation (8). Because the basis vectors are e 1 = (100), e 2 = (010), and e 3 = (001) in the sample coordinate system X-Y-Z, the crystal Jones matrix is inferred in the sample coordinate system X-Y-Z [18], as shown in Equation (9).…”

“…Due to its nondestructive, noncontact, in situ, and highly sensitive characteristics, Raman spectroscopy has been successfully applied to the field of semiconductor materials and two-dimensional materials [4][5][6]. The Raman spectra of semiconductor crystals contain structural and physical information, including crystal orientation [7], doping [8], grain size [9], stress/strain [10], and electron mobility [11]. Therefore, these properties can be characterized by quantitative analysis of the intensity, wavenumber, full width at half maximum (FWHM), and symmetry through the Raman spectra of the samples.…”

Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon

“…In this case, c � φ. e Raman intensity of each Raman mode is expressed as (11) when α is fixed but φ is rotated (φ � c) and as (12) when φ is fixed (φ � c) but α is rotated. e corresponding changes in the distributions with φ are shown in Figure 3…”

“…e Raman spectrum of semiconductor crystals contains structural and physical information, including the crystal state [8,9], crystal plane [10], doping [11], grain size [12], stress/strain [13], Fano resonance [14], and electron mobility [15]. Hence, it is possible to characterize these properties using specific theories of Raman spectroscopy by quantitatively analyzing the wavenumber, intensity, full width at half maximum (FWHM), and symmetry in the Raman spectra from the samples.…”

Graphene and Other 2D Layered Nanomaterials and Hybrid Structures: Synthesis, Properties and Applications

“…In the plasma discharge process, when the gas between the cathode and the anode is activated by the arc-discharge, a hexagonal arrangement of carbon atoms is observed, resulting from the nucleation and rearrangement of individual carbon atoms that have evaporated at the anode and cathode. Gudaitis et al [ 15 ] demonstrated that graphene can be grown on the Si (100) substrates. More in detail, few-layer graphene was synthesized from CH 4 and H 2 on the Si (100) substrates without the use of catalysts via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD).…”