Effect of tellurium substitution in Sn10Sb20Se70−XTeX(0 &lt;X&lt; 12) amorphous chalcogenide system

Chander, Ravi; Thangaraj, R.

doi:10.1051/epjap/2009115

Cited by 5 publications

(6 citation statements)

References 14 publications

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“…Optical band gap exhibited a sharp decrease for initial substitution of Se with Te upto X = 2 composition. This decrease in optical band gap was similar to the observed decrease in glass transition temperature T g with tellurium contents [18]. Further substitution of Se with Te upto X = 4 composition led to a small increase in the optical band gap and samples with higher tellurium content exhibited a slight decrease in optical band gap E g .…”

Section: Optical Propertiessupporting

confidence: 79%

“…Further substitution of Se with Te upto X = 4 composition led to a small increase in the optical band gap and samples with higher tellurium content exhibited a slight decrease in optical band gap E g . The obtained trend in optical band gap can be qualitatively explained with the help of bond formation energy [18] and band model given by Kastner [19]. The decrease in optical band gap E g with Te substitution might be due to interaction of lone pair and anti-bonding states of Te, which broadens into a band just above the lone pair band and just below the anti-bonding band of Se respectively, as reflected from ionization energy levels of elemental Te and Se [19].…”

Section: Optical Propertiesmentioning

confidence: 83%

“…Bulk samples of Sn 10 Sb 20 Se 70-X Te X (0≤X≤8) were prepared using a conventional melt quenching technique [14]. The detail of the bulk sample preparation is described elsewhere [14,18]. As-prepared bulk samples of different compositions were used for depositing thin films on cleaned glass slides by thermal evaporation technique using HINDHIVAC coating unit (Model No.…”

Section: Methodsmentioning

confidence: 99%

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Optical and Transport Properties of as Prepared and Annealed Te-Substituted Sn-Sb-Se Thin Films

Chander

Thangaraj

2010

MSF

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Thin films of Sn10Sb20Se70-XTeX (0≤X≤8) composition were deposited using thermal evaporation technique. As-prepared films were amorphous as studied by X-ray diffraction. Surface morphology studies revealed that films have surface roughness ~2 nm and av. grain size ~ 30 nm. Optical band gap Eg calculated from transmittance and reflectance data showed a sharp decrease for initial substitution of Se with Te upto 2 at%. Further substitution upto 4 at%, lead to a small increase in Eg value and thereafter it marginally decreased for further substitution beyond 4at%. The trend of optical band gap variation with tellurium content has been qualitatively explained using band model given by Kastner. The dc-conductivity measurements showed thermally activated conduction with single activation energy for the measured temperature regime and followed Mayer-Neldel rule. The dc-activation energy has nearly half the value as that of optical band gap that revealed the intrinsic nature of semiconductor. The annealing below glass transition Tg led to decrease in optical band gap as well as dc-activation energy that might be related to increase of disorder in material with annealing.

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Section: Optical Propertiessupporting

confidence: 79%

Section: Optical Propertiesmentioning

confidence: 83%

Section: Methodsmentioning

confidence: 99%

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Optical and Transport Properties of as Prepared and Annealed Te-Substituted Sn-Sb-Se Thin Films

Chander

Thangaraj

2010

MSF

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“…Biso increases with increasing Sb concentration (x), signify increase in positional disorder. It is noteworthy to mention that Sb-Te bond is weaker than Bi-Te bond, owing to difference in Pauling electronegativity [38]. As a result, mean square displacement increases with increasing Sb concentration.…”

Section: Resultsmentioning

confidence: 97%

“…Bi and Sb are isostructural and isoelectronic. But, Pauling electronegativity of Bi, Sb and Te are 2.02, 2.05, 2.1 respectively[38].Perceivable difference in electronegativity causes change in bond strength of Bi-Te and Sb-Te. The local structure become distorted and increases the disorder in the material[40,41].…”

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confidence: 96%

Effect of antimony concentration on structural and transport properties of (Bi1-xSbx)2Te3 mixed crystal

Malik

Das

Bandyopadhyay

et al. 2015

AIP Conference Proceedings

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Bi1-xSbx)2Te3 [x=0.60, 0.65, 0.68, 0.70, 0.75 and 0.80] mixed crystals have been synthesized by solid state reaction. In depth structural, thermal, transport and electronic properties are reported. Defect and disorder play a crucial role in structural and transport behaviour. Disorder induced iso-structural phase transition is observed at x=0.70, which is supported by the structural and transport properties data. Debye temperature has been estimated from the powder diffraction data. Differential scanning calorimetry (DSC) data confirms the glass transition in the material. Low temperature resistivity data (ρ(T)) shows Variable range hopping mechanism whereas high temperature data follows activated behaviour. Activation energy is calculated from the semiconducting region of ρ(T). Both Hall measurement and temperature dependent thermopower data (S(T)) confirms that samples are p-type in nature. Density of state effective mass has been estimated from Pisarenko relation and corroborated with resistivity data. Thermal conductivity (к) is estimated using experimentally obtained data. Figure of Merit (ZT) of the synthesized samples are calculated using ρ(T), S(T) and к. Structural and transport properties are correlated, confirms the transition from disorder to order state. Defect and disorder are corroborated with structural and Thermoelectric properties of the synthesized samples.

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Thermal and optical analysis of Te-substituted Sn–Sb–Se chalcogenide semiconductors

Chander

Thangaraj

2009

Appl. Phys. A

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Effect of tellurium substitution in Sn₁₀Sb₂₀Se_70−XTe_X(0 <X< 12) amorphous chalcogenide system

Cited by 5 publications

References 14 publications

Optical and Transport Properties of as Prepared and Annealed Te-Substituted Sn-Sb-Se Thin Films

Optical and Transport Properties of as Prepared and Annealed Te-Substituted Sn-Sb-Se Thin Films

Effect of antimony concentration on structural and transport properties of (Bi1-xSbx)2Te3 mixed crystal

Thermal and optical analysis of Te-substituted Sn–Sb–Se chalcogenide semiconductors

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