Thermal and optical analysis of Te-substituted Sn–Sb–Se chalcogenide semiconductors

Chander, Ravi; Thangaraj, R.

doi:10.1007/s00339-009-5486-6

Cited by 19 publications

(7 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Chalcogenide glasses have received a special attention due to their wide range of applications in various solid-state devices such as switching, memory, image converters and optical mass memories [1][2][3][4][5][6][7]. The common feature of these glasses is the presence of localized states in the mobility gap due to the absence of long-range order as well as various inherent defects.…”

Section: Introductionmentioning

confidence: 99%

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Aly

2015

Appl. Phys. A

View full text Add to dashboard Cite

Different compositions of amorphous Sn x (GeSe) 100-x (0.0 B x B 0.12 at.%) thin films were deposited onto glass substrates by the thermal evaporation technique. The optical constants (n and k) and film thicknesses of Sn x (GeSe) 100-x thin films were obtained based only on their measured reflectance spectra in the wavelength range 300-2500 nm. It was found that the refractive index (n) increased while the optical energy gap (E g ) decreased with increasing tin content. The possible optical transition in these films obeys the allowed non-direct transitions. The obtained results were discussed in terms of the electronic polarizability (a e ). The dispersion parameters [the single-oscillator energy (E 0 ) and the dispersion energy (E d )] were obtained by fitting the refractive index according to Wemple and Di-Domenico model. The third-order nonlinear optical susceptibility v (3) was calculated with the help of E 0 and E d values. The obtained values of v (3) are too high, indicating that the films under study are interesting materials for nonlinear optical devices.

show abstract

Section: Introductionmentioning

confidence: 99%

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Aly

2015

Appl. Phys. A

View full text Add to dashboard Cite

show abstract

“…Bulk samples of Sn 10 Sb 20 Se 70-X Te X (0≤X≤8) were prepared using a conventional melt quenching technique [14]. The detail of the bulk sample preparation is described elsewhere [14,18].…”

Section: Methodsmentioning

confidence: 99%

“…The change in physical properties, with <r> around 2.4 and 2.67 has been studied by many researchers [12,13]. But the effect of substituting one chalcogen with another has not been studied much [14]. It is interesting to study the effect of substituting one chalcogen with another on physical properties of the materials and in the present study it has been done for a system having mean coordination no.<r> =2.4 i.e.…”

Section: Introductionmentioning

confidence: 98%

Optical and Transport Properties of as Prepared and Annealed Te-Substituted Sn-Sb-Se Thin Films

Chander

Thangaraj

2010

MSF

Self Cite

View full text Add to dashboard Cite

Thin films of Sn10Sb20Se70-XTeX (0≤X≤8) composition were deposited using thermal evaporation technique. As-prepared films were amorphous as studied by X-ray diffraction. Surface morphology studies revealed that films have surface roughness ~2 nm and av. grain size ~ 30 nm. Optical band gap Eg calculated from transmittance and reflectance data showed a sharp decrease for initial substitution of Se with Te upto 2 at%. Further substitution upto 4 at%, lead to a small increase in Eg value and thereafter it marginally decreased for further substitution beyond 4at%. The trend of optical band gap variation with tellurium content has been qualitatively explained using band model given by Kastner. The dc-conductivity measurements showed thermally activated conduction with single activation energy for the measured temperature regime and followed Mayer-Neldel rule. The dc-activation energy has nearly half the value as that of optical band gap that revealed the intrinsic nature of semiconductor. The annealing below glass transition Tg led to decrease in optical band gap as well as dc-activation energy that might be related to increase of disorder in material with annealing.

show abstract

“…For instance, the heating-rate dependence of T g can be investigated. Moharram, A H et al [21][22][23] applied the empirical relation (1) to analyze the dependence of T g on β in glasses.…”

Section: Thermal Analysismentioning

confidence: 99%

“…The theory of structural relaxation and glass transition kinetics developed by Moynihan and other workers [24][25][26] has been used for this purpose. Some efforts have also been made to calculate E g using Kissinger's relation [23,[25][26][27][28][29]. Since E g calculated from this relation has less dependence on thermal history, this method appears to have some extra advantage.…”

Section: Active Energy Of Glass Transition E Gmentioning

confidence: 99%

Influence of PCBM on the Glass Transition Temperature (Tg) of Poly(N-Vinylcarbazole)-Based Photorefractive Composite

Chen

Huang

Yang

et al. 2017

MSF

View full text Add to dashboard Cite

2,5-dimethyl-(4-p-nitrophenylazo) phenetole (DMNPAPE) was synthesized. And its structure was confirmed with ultraviolet-visible (UV-vis) spectroscopy, Fourier transform infrared (FT-IR) spectra and 1H Nuclear Magnetic Resonance (1H NMR) spectroscopy. The photorefractive composite consist of 33 wt % poly (N-vinycarbazole) (PVK), 50 wt % 2, 5-dimethyl-(4-p-nitrophenylazo) phenetole (DMNPAPE) and 16 wt % ethyl carbazole (ECZ) doped with x wt % (≤1 wt%) [6, 6]-phenyl C61 butyric acid methyl ester (PCBM) was fabricated. The influence of PCBM on the glass transition temperature (Tg) of the photorefractive composite was studied using a differential scanning calorimetric (DSC) method. The active energy of glass transition (Eg) was evaluated by Kissinger’s and Moynihan’s relation. The analysis results indicate that the transition region shifts to higher temperatures with the increasing heating rate, and PCBM content (≤1.0 wt %) can influence Tg of PVK - based PR composite polymers. The Tg first increase and then went down with the PCBM content (below 1.0 wt %) increasing. The possible cause of the influence of PCBM on Tg was proposed.

show abstract

Thermal and optical analysis of Te-substituted Sn–Sb–Se chalcogenide semiconductors

Cited by 19 publications

References 23 publications

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Optical and Transport Properties of as Prepared and Annealed Te-Substituted Sn-Sb-Se Thin Films

Influence of PCBM on the Glass Transition Temperature (<i>T</i><sub>g</sub>) of Poly(<i>N</i>-Vinylcarbazole)-Based Photorefractive Composite

Contact Info

Product

Resources

About