Effect of Ta incorporation on the microstructure, electrical and optical properties of Hf1−xTaxO high-k film prepared by dual ion beam sputtering deposition

Vapor phase condensation of methyl acetate with formaldehyde to preparing methyl acrylate over cesium supported SBA-15 catalyst

“…Cs-O-Si, similar to the Si-O-M species [37][38][39][40], the bind energy 226 near 533 eV was due to Si-O (Si-O-Si, Si-O-H) from SiO 2 support 227 [41]. …”

Comparison of microstructure and electrical characteristics of sputtering-derived HfGdO/HfTiO and HfTiO/HfGdO gate stacks

“…annealing located at around 281, which originates from the monoclinic structure of HfO 2 [21]. It is believed that the high leakage current of crystalline samples is mainly due to grain boundaries that serve as high leakage paths of the gate oxide layer [22]. The same phenomenon occurs for HfTiO/HfGdO samples.…”

On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology

“…Yet, amongst all these issues, the interface properties and their thermal instabilities need to be resolved firstly [64][65][66][67][68][69][70][71][72]. Transition metal (TM) or rare-earth metal (RE) based high-k dielectrics are extrinsic materials to the substrate silicon.…”

“…It was proposed that the oxygen in W may diffuse into the La 2 O 3 film to fill up the oxygen vacancies there. Oxygen vacancies are the major defect centers in La 2 O 3 which result in several instability issues and enhance the gate leakage current [59][60][61][62][63][64][65][66][67][68][69][70][71]. Post-metallization annealing may cause an reverse effect.…”

“…Most of the high-k silicides are conductive. The interfacial silicide layer would not affect the EOT but the interface metal-Si bonding is one of the interface trap precursors and results in the channel mobility degradation and in other instabilities [2,[59][60][61][62][63][64][65][66][67][68][69][70]. Most of the high-k materials, including hafnium oxide and lanthanum oxide are only marginally stable against the formation of silicates.…”