Effect of Surface Variations on the Performance of Yttria Based Memristive System

Das, Mangal; Kumar, Amitesh; Kumar, Sanjay; Mandal, Biswajit; Khan, Arif; Mukherjee, Shaibal

doi:10.1109/led.2018.2878953

Cited by 25 publications

(17 citation statements)

References 28 publications

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“…The δ/μ values of the V SET and V RESET were reduced by about 45% in the laser-engineered RRAM, which may be mainly attributed to the improvement in the roughness of the interfacial layer. The roughness of the interfacial layer is known as one of the most important prerequisites for implementing reliable and reproducible RRAM . The interfacial layer with bad roughness causes the local electric field (LEF) and aggravates the electric field nonuniformity, increasing the randomness of CFs and variability.…”

Section: Resultsmentioning

confidence: 99%

“…The roughness of the interfacial layer is known as one of the most important prerequisites for implementing reliable and reproducible RRAM. 48 The interfacial layer with bad roughness causes the local electric field (LEF) and aggravates the electric field nonuniformity, increasing the randomness of CFs and variability. From this perspective, the laser-engineered interfacial layer with improved roughness and uniform morphology can alleviate the electric field nonuniformity and reduce variability.…”

Section: ••mentioning

confidence: 99%

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Laser-Assisted Interface Engineering for Functional Interfacial Layer of Al/ZnO/Al Resistive Random Access Memory (RRAM)

Park

Han

Shin

2020

ACS Appl. Mater. Interfaces

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In oxide-based RRAMs using reactive electrodes such as Al, the properties of spontaneously formed interfacial layers are critical factors in determining the resistive switching (RS) performance and reliability. This interfacial layer can provide the beneficial function of oxygen reservoir and series resistance, but is very labile and prone to deterioration, causing fatal reliability problems. Moreover, there are technical difficulties in manipulating and improving the functional interfacial layer due to the various interaction dynamics near the interface and the unstable thermodynamic properties of Al. In this work, laser-assisted interface engineering, which allows exquisite manipulation of the labile interfacial layer, is proposed to improve the reliability and performance of Al/ZnO/Al RRAMs. In addition to photothermal and photochemical effects, the proposed laser process enables fine control over out-diffusions of Al atoms in the vicinity of the ZnO/Al interface, forming a robust interfacial layer with a uniform morphology and abundant oxygen Frenkel pairs. This laser-engineered interfacial layer increases the R HRS /R LRS ratio by over 100fold and reduces R HRS variation with improved oxygen reservoir ability. It also appears to reduce leakage current and power consumption by acting as a stable series resistance. The correlation between structural and stoichiometric properties of the functional interfacial layer and the performance and reliability of the RRAM is explicated. The results suggest that laser-assisted interface engineering can be one of the most promising methods to implement highly reliable, high-performance Al/ZnO/Al RRAMs.

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Section: Resultsmentioning

confidence: 99%

Section: ••mentioning

confidence: 99%

Laser-Assisted Interface Engineering for Functional Interfacial Layer of Al/ZnO/Al Resistive Random Access Memory (RRAM)

Park

Han

Shin

2020

ACS Appl. Mater. Interfaces

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“…GB with minimum rotation angle can be treated as an group of edge dislocations and aggregation of screw dislocations [34]. The concentration of oxygen vacancies (O v ) is comparatively higher at GBs which leads to leakage current flow through the GBs predominantly [64]. Any variation in O v will be closely related to grain boundary and grain surface area.…”

Section: Effect Of Grain Surface Area and Grain Boundarymentioning

confidence: 99%

“…However, these correlation becomes are not impactful if electrode size less than the individual grain size [74]. In addition, Das et al have discussed the effect of GBs, GSs, and surface morphology such as (hillocks, lattice mismatch) on the statistical variation of RS parameters (forming voltage, set-reset voltage) in yttriabased resistive switching device (Figure 2) [64]. Successive RS operations depend on the inhomogeneous changes in defect structure, and as a result, the switching parameters also vary persistently.…”

Section: Effect Of Grain Surface Area and Grain Boundarymentioning

confidence: 99%

Effect of Surface Variations on Resistive Switching

Das¹,

Sandeep²

2021

Memristor - An Emerging Device for Post-Moore’s Computing and Applications

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In this chapter, we study factors that dominate the interfacial resistive switching (RS) in memristive devices. We have also given the basic understanding of different type of RS devices which are predominantly interfacial in nature. In case of resistive random access memory (RRAM), the effect of surface properties on the bulk cannot be neglected as thickness of the film is generally below 100 nm. Surface properties are effected by redox reactions, interfacial layer formation, and presence of tunneling barrier. Surface morphology affects the band structure in the vicinity of interface, which in turn effects the movements of charge carriers. The effect of grain boundaries (GBs) and grain surfaces (GSs) on RS have also been discussed. The concentration of vacancies (Ov)/traps/defects is comparatively higher at GBs which leads to leakage current flow through the GBs predominantly. Such huge presence of charge carriers causes current flow through grain boundaries.

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“…Sometimes, ions can oxidise upon reaching the positive electrode via the halfreaction 2O 2− → 4 − + O 2(g) , forming bubbles of oxygen gas 11 . With such ReRAM devices, it is important to identify and understand the failure mechanisms that impact endurance and variations in memristive device parameters, thus avoiding the extra energy required to eliminate the impact of process variations, which modify geometries, thicknesses and contact areas 6,12,13 ).…”

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confidence: 99%

Real-time in situ optical tracking of oxygen vacancy migration in memristors

Martino

Demetriadou

et al. 2020

Nat Electron

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Effect of Surface Variations on the Performance of Yttria Based Memristive System

Cited by 25 publications

References 28 publications

Laser-Assisted Interface Engineering for Functional Interfacial Layer of Al/ZnO/Al Resistive Random Access Memory (RRAM)

Laser-Assisted Interface Engineering for Functional Interfacial Layer of Al/ZnO/Al Resistive Random Access Memory (RRAM)

Effect of Surface Variations on Resistive Switching

Real-time in situ optical tracking of oxygen vacancy migration in memristors

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