Effect of surface roughness on elastic limit of silicon nanowires

Liu, Qunfeng; Wang, Liang; Shen, Shengping

doi:10.1016/j.commatsci.2015.02.009

Cited by 15 publications

(4 citation statements)

References 35 publications

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“…By summarizing all successful tests on both VLS-grown Si nanowires and top-down etched Si nanowires in Fig. 4D for statistical analysis, we can see that the presence of surface roughness and possibly other etch-induced defects, such as porosity ( 45 , 46 ), can significantly reduce the elastic limit of Si nanowires, which agrees with previous experiments (with fracture strengths of ~4 to 5 GPa) on metal-assisted, catalytically etched Si nanowires ( 47 ) as well as a recent molecular dynamics simulation result ( 48 ). It might also be noted that earlier studies on VLS growth of Si nanowires suggested that <110>-oriented nanowires could generally have smoother sidewalls compared to <111>-oriented wires ( 49 ), so again we believe that the smooth surfaces make a big difference.…”

Section: Discussionsupporting

confidence: 90%

Approaching the ideal elastic strain limit in silicon nanowires

Zhang

Tersoff²,

et al. 2016

Sci. Adv.

191

117

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Section: Discussionsupporting

confidence: 90%

Approaching the ideal elastic strain limit in silicon nanowires

Zhang

Tersoff²,

et al. 2016

Sci. Adv.

191

117

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“…[ 21 ] In addition to the geometric scaling, intrinsic effects associated with the surfaces and defects in NWs also contribute to their high deformability. [ 22 ] Bending experiments on Si NWs showed a high fracture strength (≈18 GPa) approaching the theoretical strength of ≈20 GPa, as compared with typical values of ≈1.5 GPa for bulk samples. [ 23,24 ] In situ tensile tests in a scanning electron microscope (SEM) revealed that Si NWs can withstand 10% of cyclic tensile strains without fracture (Figure 1c), which is far beyond the ultimate tensile strain of bulk Si (≈1%).…”

Section: The Toolbox Of Soft Electronic Materialsmentioning

confidence: 94%

3D Interfacing between Soft Electronic Tools and Complex Biological Tissues

Liu

Sun

et al. 2020

Advanced Materials

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Recent developments in soft functional materials have created opportunities for building bioelectronic devices with tissue‐like mechanical properties. Their integration with the human body could enable advanced sensing and stimulation for medical diagnosis and therapies. However, most of the available soft electronics are constructed as planar sheets, which are difficult to interface with the target organs and tissues that have complex 3D structures. Here, the recent approaches are highlighted to building 3D interfaces between soft electronic tools and complex biological organs and tissues. Examples involve mesh devices for conformal contact, imaging‐guided fabrication of organ‐specific electronics, miniaturized probes for neurointerfaces, instrumented scaffold for tissue engineering, and many other soft 3D systems. They represent diverse routes for reconciling the interfacial mismatches between electronic tools and biological tissues. The remaining challenges include device scaling to approach the complexity of target organs, biological data acquisition and processing, 3D manufacturing techniques, etc., providing a range of opportunities for scientific research and technological innovation.

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“…Lyon et al [8] theoretically studied the effects of roughness at the atomic scale on the surface plasmon excitation, and found visible effects of the surface roughness on the image potential and stopping power. Through a molecular dynamics simulation, Liu et al [9] found that the surface roughness plays a significant role in the plasticity initiation of silicon nanowires. Nunez and Polycarpou [10] experimentally investigated the effects of the counterpart surface roughness on the formation of a transfer layer from the polymer films for application to dry or solid lubrication, and determined the dependence of the friction coefficient and wear rate on the surface roughness.…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional finite element analysis of shallow indentation of rough strain-hardening surface

2018

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Three-dimensional finite element modeling of the contact between a rigid spherical indenter and a rough surface is presented when considering both the loading and unloading phases. The relationships among the indentation load, displacement, contact area, and mean contact pressure for both loading and unloading are established through a curve fitting using sigmoid logistic and power law functions. The contact load is proportional to the contact area, and the mean contact pressure is related to the characteristic stress, which is dependent on the material properties. The residual displacement is proportional to the maximum indentation displacement. A proportional relationship also exists for plastically dissipated energy and work conducted during loading. The surface roughness results in an effective elastic modulus calculated from an initial unloading stiffness several times larger than the true value of elastic modulus. Nonetheless, the calculated modulus under a shallow spherical indentation can still be applied for a relative comparison.

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Effect of surface roughness on elastic limit of silicon nanowires

Cited by 15 publications

References 35 publications

Approaching the ideal elastic strain limit in silicon nanowires

Approaching the ideal elastic strain limit in silicon nanowires

3D Interfacing between Soft Electronic Tools and Complex Biological Tissues

Three-dimensional finite element analysis of shallow indentation of rough strain-hardening surface

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