Effect of sulfurization temperature on the efficiency of SnS solar cells fabricated by sulfurization of sputtered tin precursor layers using effusion cell evaporation

Reddy, Vasudeva Reddy Minnam; Cho, Haeyun; Gedi, Sreedevi; Reddy, K.T. Ramakrishna; Kim, Woo Kyoung; Park, Chinho

doi:10.1016/j.jallcom.2019.07.168

Cited by 20 publications

(3 citation statements)

References 39 publications

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“…The VTD-SnS shows deciency of S in the form of S vacancy (V S ) and an increase in the sulfur content in the lm to a certain extent is benecial for the VTD-SnS device performance, as it reduces the V S . [25][26][27] Here, EDAX of the thin lm deposited on a Mo substrate was performed. Mo and S peaks coincide with each other in EDAX analysis measurement.…”

Section: Resultsmentioning

confidence: 99%

Prebaking of an SnS source with sulfur for achieving higher photovoltaic performance in VTD-SnS thin films for solar cells

Yadav,

Pawar,

Kim

et al. 2024

J. Mater. Chem. A

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Section: Resultsmentioning

confidence: 99%

Prebaking of an SnS source with sulfur for achieving higher photovoltaic performance in VTD-SnS thin films for solar cells

Yadav,

Pawar,

Kim

et al. 2024

J. Mater. Chem. A

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“…This drives people to develop other cheaper materials for the absorber layer. Considering the cost-benefit of the manufacturing process, more efficient and nature-friendly SnS (tin monosulfide) is one of the feasible solutions for solar cell application [19,20]. Solar cells based on SnS show good external quantum efficiency (EQE) with low carrier transfer resistance [21].…”

Section: Introductionmentioning

confidence: 99%

Highly efficient SnS-based inverted planar heterojunction solar cell with ZnO ETL

Islam

Ahmmed

et al. 2023

Phys. Scr.

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Tin Sulfide (SnS) is a promising absorber material for solar energy harvesting owing to the high absorption coefficient. Here, a novel inverted planar heterostructure of SnS based solar cell (ITO/NiOX/SnS/ZnO/Al) has been proposed for better efficiency among the different electron transport layers (ETLs), PCBM, C60, CeOX, and ZnO. The performance of the SnS based solar cell was theoretically studied by the Solar Cell Capacitance Simulator (SCAPS) software. Initially, we have been observed the device performance with different ETL materials to find the better ETL material. The layer parameters of the HTL, absorber layer, and ETLs have been optimized to find out the best performance of the device. The device showed efficiencies of around 26.44%, 26.33%, and 26.38% with the ETLs PCBM, C60, and CeOX respectively. The maximum power conversion efficiency (PCE) of ~28.15% has been observed after incorporating ZnO ETL in the designed architecture of the SnS-based solar cell. Then, we have been investigated the performance of the SnS-based solar cell with ZnO ETL for the various value of carrier concentration, thickness, and bulk defect of the SnS absorber layer, defect of the interfaces of NiOX/SnS and SnS/ZnO, back metal contact's work function, and its operating temperature. The variation of the different parameters has exhibited a substantial effect on the device performance. The VOC, JSC, FF, and PCE of the optimized SnS-based solar cell with ZnO ETL showed 0.8954 V, 37.316452 mA/cm2, 84.24%, and 28.15%, respectively. The visualization of the results indicates that ZnO might be a potential ETL for the highly efficient, low-cost inverted planar solar cells based on SnS.

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“…Various deposition methods, such as thermal evaporation [22,25], vapour transport deposition [26], RF sputtering [27], spin coating [28], atomic layer deposition [18], spray pyrolysis [29], and chemical vapour deposition [30], have been employed over decades for SnS thin film deposition in the context of SPV device applications. In 1994, the first SnS solar cell configuration comprising ITO/CdS/SnS/Ag was reported using a vacuum evaporation technique [31].…”

Section: Introductionmentioning

confidence: 99%

Multistep design simulation of heterojunction solar cell architecture based on SnS absorber

Islam,

Thakur

2023

Phys. Scr.

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We report, a novel multi-step design simulation results on SnS absorber based solar cell architecture with ~4.5 times efficiency enhancement vis-à-vis reported experimental results. It is ascribed to an efficient control over inherent loss mechanism via device design novelty. The multi-step design modification in the device architecture comprised; (a) absorber bandgap widening at the interface, (b) considering donor interfacial defects at the SnS/buffer junction, (c) limiting the presence of the majority carrier at the interface via asymmetric doping at the SnS/buffer interfaces, and (d) employing back surface field at the absorber/back metal contact interface. This design approach resulted in achieving an optimal design configuration that exhibited significant improvements in open circuit voltage (119%), short circuit current (61%), fill factor (25.8%), and efficiency (347.6%) compared to the experimental benchmark. An overall effect of improved parameters, in the modified architecture of the SnS absorber based solar cell, led to substantial enhancement in efficiency close to ~19% vis-à-vis 4.23% reported in literature.

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Effect of sulfurization temperature on the efficiency of SnS solar cells fabricated by sulfurization of sputtered tin precursor layers using effusion cell evaporation

Cited by 20 publications

References 39 publications

Prebaking of an SnS source with sulfur for achieving higher photovoltaic performance in VTD-SnS thin films for solar cells

Prebaking of an SnS source with sulfur for achieving higher photovoltaic performance in VTD-SnS thin films for solar cells

Highly efficient SnS-based inverted planar heterojunction solar cell with ZnO ETL

Multistep design simulation of heterojunction solar cell architecture based on SnS absorber

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