Multistep design simulation of heterojunction solar cell architecture based on SnS absorber

Abstract

We report, a novel multi-step design simulation results on SnS absorber based solar cell architecture with ~4.5 times efficiency enhancement vis-à-vis reported experimental results. It is ascribed to an efficient control over inherent loss mechanism via device design novelty. The multi-step design modification in the device architecture comprised; (a) absorber bandgap widening at the interface, (b) considering donor interfacial defects at the SnS/buffer junction, (c) limiting the presence of the majority carrier at the interface via asymmetric doping at the SnS/buffer interfaces, and (d) employing back surface field at the absorber/back metal contact interface. This design approach resulted in achieving an optimal design configuration that exhibited significant improvements in open circuit voltage (119%), short circuit current (61%), fill factor (25.8%), and efficiency (347.6%) compared to the experimental benchmark. An overall effect of improved parameters, in the modified architecture of the SnS absorber based solar cell, led to substantial enhancement in efficiency close to ~19% vis-à-vis 4.23% reported in literature.

The role of interface energetics in Sb2Se3 thin film solar cells

“…Figure 11 shows the schematic corresponding to the scenario when (a) donor defects occupy the interface states and (b) acceptor defects occupy the interface. If the interface states are occupied by the donor defect, it nullify the recombination through interface state [31,32]. As photo-generated electron moving from p-layer to n-layer, encounters electron filled interface state (in case of donor defects), decreasing recombination due to non-feasibility of electron-electron recombination.…”

SCAPS-FDTD simulation of 20.1 % efficient Perovskite-SnS tandem solar cell based on alternative charge transport layers and Au-nanoparticles

“…The choice of Cs 2 AgBi 0.75 Sb 0.25 Br 6 as LFP absorber material is made with respect to its interesting optical absorption characteristics, tunable wide band gap, improved optoelectronic properties, and eco-friendly nature, which make it a good alternative absorber material for optoelectronics and top-cell tandem cells [12] and [16,17]. On the other hand, SnS earth-abundant material demonstrates high absorption characteristics, appropriate band gap and high carrier mobility, making it a potential tandem partner with Cs 2 AgBi 0.75 Sb 0.25 Br 6 double perovskite top cell [23][24][25]. The top cell is suggested with wide band gap LFP material, enabling the efficient absorption of photons with shorter-wavelength sunlight.…”

“…To this extent, theoretical investigations have proposed new LFPbased tandem structures using Perovskite, Organic and CZTSSe-based cell partners, showing a great promise to achieve enhanced PCEs [18][19][20][21]. Particularly, Tin-sulfide (SnS) is emerged as potential nontoxic and costeffective for developing TFSCs owing to its outstanding optical and electrical properties, tunable direct band gap (1.1 eV), high absorption capabilities (>10 5 cm −1 ), earth-abundance, good carrier mobility and low recombination velocity [22][23][24]. These attractive characteristics are expected to open new paths for developing eco-friendly high-efficiency lead-free-based Perovskite-SnS tandem SCs.…”