Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Zhang, Xiaoying; Peng, Duan-Chen; Han, Jing; Ren, Fang-Bin; Jiang, Shi-Cong; Tseng, Mei-Chih; Ruan, Yu-Jiao; Zuo, Juan; Wu, Wan-Yu; Wuu, Dong-Sing; Huang, Chien Hao; Lien, Shui−Yang; Zhu, Wen-Zhang

doi:10.1016/j.surfin.2022.102589

Cited by 8 publications

(2 citation statements)

References 40 publications

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“…The transition layer between the substrate and the AlN film is presented on HRTEM image (Figure 7b), and is possibly formed at the initial stage of the film growth. Use of a buffer layer for better AlN or GaN growth has previously been described, for example, in [47,48]. The thickness of the transition layer is approximately 20 nm, and it perhaps plays the role of the substrate for desirable columnar growth.…”

Section: Resultsmentioning

confidence: 99%

Chemical Composition, Structure, and Physical Properties of AlN Films Produced via Pulsed DC Reactive Magnetron Sputtering

et al. 2023

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The chemical composition, structure, and physical properties of aluminum nitride (AlN) films obtained using pulsed DC reactive magnetron sputtering in asymmetric bipolar mode have been studied. X-ray diffraction and electron diffraction confirmed the composition of c–axis textured hexagonal AlN films required for piezoelectric applications. The surface of the films obtained is quite smooth; the arithmetic average roughness does not exceed 2 nm. Transmission electron microscopy has shown the presence of a transition layer at the film–substrate interface. Transmission electron microscopy and X-ray photoelectron spectroscopy depth profile analysis have shown that the films have an oxidized surface layer which has an influence on the optical model of the films derived from ellipsometric data. However, it does not significantly influence the films’ piezoresponse. Piezoelectric force microscopy indicated a piezoelectric effect in the films that is uniform over their surface.

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Section: Resultsmentioning

confidence: 99%

Chemical Composition, Structure, and Physical Properties of AlN Films Produced via Pulsed DC Reactive Magnetron Sputtering

et al. 2023

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“…To mitigate the impact of lattice mismatch in ALD, several approaches have been proposed, including the use of buffer layers and lattice‐matching substrates. [ 73 ] Interfacial layers can serve as a bridge between the substrate and the deposited film, allowing for some degree of lattice relaxation and reducing the strain energy. In addition, lattice‐matching substrates with crystal structures similar to those of the deposited material can help minimize lattice mismatch and reduce the strain energy.…”

Section: Opportunities and Challengesmentioning

confidence: 99%

Interfaces in Atomic Layer Deposited Films: Opportunities and Challenges

Zaidi,

Park,

Han

et al. 2023

Small Science

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Atomic layer deposition (ALD) is an effective method for precise layer‐wise growth of thin‐film materials and has allowed for substantial progress in a variety of fields. Advances in the technique have instigated high‐level interpretations of the relationship between nanostructure architecture and performance. An inherent part in the ALD of films is the underlying interfaces between each material, which plays a significant role in advanced electronics. Considering the impact of sandwiched substructures, it is appropriate to highlight opportunities and challenges faced by applications that rely on these interfaces. This review encompasses the current prospects and obstacles to further performance improvements in ALD‐generated interfaces. 2D electron gas, high‐k materials, freestanding layered structures, lattice matching, and seed layers, as well as prospects for future research, are explored.

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Effect of AlN/GaN supercycle ratio on properties of AlxGa1−xN films using super-cycle plasma enhanced atomic layer deposition

Zhang,

Ren,

Hsu

et al. 2024

Journal of Alloys and Compounds

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Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Cited by 8 publications

References 40 publications

Chemical Composition, Structure, and Physical Properties of AlN Films Produced via Pulsed DC Reactive Magnetron Sputtering

Chemical Composition, Structure, and Physical Properties of AlN Films Produced via Pulsed DC Reactive Magnetron Sputtering

Interfaces in Atomic Layer Deposited Films: Opportunities and Challenges

Effect of AlN/GaN supercycle ratio on properties of AlxGa1−xN films using super-cycle plasma enhanced atomic layer deposition

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