Effect of substrate temperature on photoconductivity in CdTe thin films

Sarmah, K.; Das, Hirendra

doi:10.1016/0040-6090(91)90321-n

Cited by 16 publications

(4 citation statements)

References 13 publications

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“…The photoconductivity of CdTe films may be due to the effect of photogenerated carriers and/or intergrain barrier height reduction. 23,24) Figure 8 shows the cell parameters of the CdS/CdTe solar cells as a function of the growth temperature of CdTe film. A noticeable change is observed in the short-circuit current density (J sc ), which is found to increase markedly with growth temperature.…”

Section: Resultsmentioning

confidence: 99%

Effects of the Growth Temperature on the Properties of CdTe Thin Films for Solar Cell Applications

Lee

Park

Yang

2001

Jpn. J. Appl. Phys.

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CdTe films for solar cell application were prepared at various growth temperatures by a vacuum evaporation system having close spacing between the source and substrate. The CdTe thin films had a cubic structure highly oriented with the (111) direction perpendicular to the substrate surface, regardless of the growth temperature. The crystallites are of random shape and reach up to about 2 µm in size with increasing growth temperature. The higher growth temperature contributed to the reduction of dark resistivity from 6 × 10 7 ·cm at room temperature to 45.4 × 10 6 ·cm at 300 • C. The photovoltaic properties of the CdS/CdTe solar cell were considerably improved with the increase in the growth temperature, which was caused by the increase of (111) texture and grain size in CdTe films.

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Section: Resultsmentioning

confidence: 99%

Effects of the Growth Temperature on the Properties of CdTe Thin Films for Solar Cell Applications

Lee

Park

Yang

2001

Jpn. J. Appl. Phys.

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“…Winn and Lyons [7] showed that with increasing substrate temperature, the conductivity decreases abruptly, in contrast to Sarmah and Das [8] who observed an increase. However, Hayashi et al [9] reported an increase in the conductivity to a maximum followed by a decrease to a minimum and increase again as the substrate temperature was increased.…”

Section: Introductionmentioning

confidence: 87%

Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

El‐Mongy

Hashem

Ramadan

2005

Physica Status Solidi (a)

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The correlation between the structural characteristics (stoichiometry and crystallite size) of CdTe films and their electronic transport properties were the aims of the present study to bring attention to the dual importance of grain size and conversion of the semiconductivity type with changing film thickness. Two main parameters were considered: the substrate temperature and film thickness. Transport properties were influenced by grain boundaries as well as by native doping. Optical measurements showed two main direct transitions at energies: E 1 ≈ 1.55 eV (fundamental gap) and E 2 ≈ 2.49 eV (due to valence band splitting). Both transitions were found to be thickness dependent with a marked change at a film thickness of about 300 nm. In the case of low substrate temperature, the scaling relation between resistivity and grain size showed a deviation from linear behavior at a size of 20 nm and the transmission coefficient is reduced. Also, the deposition on cold substrate enhanced both dark and photoconductivity for films of thickness ≥300 nm. It is also proved that the carrier transport was affected by the transmission coef-ficient for carriers to pass a single grain boundary as well as the number of grain boundaries per mean free path.

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“…Thin films of CdSe, grown at elevated T s , are found to be of polycrystalline nature having grains of different sizes. These films have some built in potential barriers, φ b , at the grain boundaries and this grain boundary potential can be expressed as (Sarmah and Das 1991) …”

Section: Mobility Activation In Cdse Thin Filmsmentioning

confidence: 99%

Mobility activation in thermally deposited CdSe thin films

Sarmah

Sarma

2009

Bull Mater Sci

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Effect of illumination on mobility has been studied from the photocurrent decay characteristics of thermally evaporated CdSe thin films deposited on suitably cleaned glass substrate held at elevated substrate temperatures. The study indicates that the mobilities of the carriers of different trap levels are activated due to the energy of incident illumination, which results in the existence of two distinct trap levels. In each trap depth the energy of the trap increases linearly. It infers that there is a linear distribution of traps of different energies below the conduction band.

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Effect of substrate temperature on photoconductivity in CdTe thin films

Cited by 16 publications

References 13 publications

Effects of the Growth Temperature on the Properties of CdTe Thin Films for Solar Cell Applications

Effects of the Growth Temperature on the Properties of CdTe Thin Films for Solar Cell Applications

Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

Mobility activation in thermally deposited CdSe thin films

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