Effect of substrate temperature on the physical properties of In2O3:Mo films: Prepared by an activated reactive evaporation

A study on crystallization, optical and electrical properties of the advanced ZITO thin films using co-sputtering system

“…This violet emission was mainly attributed to the radiative recombination related to the interface traps between the grain boundaries [38]. Also, the existence of oxygen vacancies and indium-oxygen vacancy centers probably resulted in the generation of this violet emission [39]. These visible emissions of 550 nm and 596 nm were corresponding to the deep-level emission that originated from the oxygen vacancies in ZITO films and radiative recombination of electron form shallow donors with trapped holes, respectively [40].…”

Electrical and optical properties of In2O3:Mo thin films prepared at various Mo-doping levels

“…Compared to these dopants, Mo ([Kr]: 4d 5 5s 1 ) is the more beneficial impurity to be doped into the In 2 O 3 matrix as it can donate more than three electrons to the free carriers due to the high valence difference between Mo +6 ions and substituted In +3 ions. A variety of deposition techniques such as thermal evaporation, electrodeposition, radio frequency magnetron sputtering and high density plasma evaporation [15][16][17][18] have been employed for the preparation of undoped and molybdenum-doped indium oxide thin films (IMO).…”

Optimization of growth of In2O3 nano-spheres thin films by electrodeposition for dye-sensitized solar cells

“…Variety of physical methods including reactive evaporation [10], pulsed laser evaporation [11], sol-gel [12] and sputtering [13] in addition to chemical methods [14][15][16] are presented in literature for In 2 O 3 thin film fabrication. Among these methods, electrodeposition technique offers many advantages such as low cost of the apparatus and raw materials, easy control over the deposition parameters and possibility of large area deposition compared to other film growth techniques.…”