Effect of Substrate-RF on Sub-200 nm Al0.7Sc0.3N Thin Films

Pirro, Michele; Zhao, Xuanyi; Herrera, Bernard; Simeoni, Pietro; Rinaldi, Matteo

doi:10.3390/mi13060877

Cited by 8 publications

(7 citation statements)

References 41 publications

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“…Article https://doi.org/10.1038/s41467-023-44038-9 a source of performance reduction in acoustic devices, both in terms of Q and k 2 t 50 . To avoid Figure of Merit degradation, deposition conditions must be finely tuned to mitigate AOGs formation, achieve excellent crystallinity, and maintain residual stress levels within the failure tolerance of the suspended plates 46,60,61 .…”

Section: Scaln Thin-film Deposition Optimizationmentioning

confidence: 99%

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Giribaldi,

Colombo,

Simeoni

et al. 2024

Nat Commun

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Over recent years, the surge in mobile communication has deepened global connectivity. With escalating demands for faster data rates, the push for higher carrier frequencies intensifies. The 7–20 GHz range, located between the 5G sub-6 GHz and the mm-wave spectra, provides an excellent trade-off between network capacity and coverage, and constitutes a yet-to-be-explored range for 5G and 6G applications. This work proposes a technological platform able to deliver CMOS-compatible, on-chip multi-frequency, low-loss, wide-band, and compact filters for cellular radios operating in this range by leveraging the micro-to-nano scaling of acoustic electromechanical resonators. The results showcase the first-ever demonstrated low insertion loss bank of 7 nanoacoustic passband filters in the X-band. Most of the filters showcase fractional bandwidths above 3% and sub-dB loss per stage in an extremely compact form factor, enabling the manufacturing of filters and duplexers for the next generation of mobile handsets operating in the X-band and beyond.

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Section: Scaln Thin-film Deposition Optimizationmentioning

confidence: 99%

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Giribaldi,

Colombo,

Simeoni

et al. 2024

Nat Commun

Self Cite

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show abstract

“…In particular, AOGs have been identified as a source performance degradation of microacoustic resonators, both in terms of Q and k 2 t [44]. Because of this, deposition conditions have to be finely tuned to mitigate AOGs formation, achieve excellent crystallinity, and maintain residual stress levels within the failure tolerance of the suspended plates [40] [45] [46].…”

Section: Methodsmentioning

confidence: 99%

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Giribaldi

Colombo

Simeoni

et al. 2023

Preprint

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The last half a century has seen an enormous growth in mobile communication, reflecting into an increasingly interconnected world. Nevertheless, the incessant demand for faster data-rates requires a shift to higher carrier frequencies, which translates to the need for more ubiquitous hardware due to the increased wave propagation losses. The 7-20 GHz range, located between the sub-6 GHz (5G FR-1) and the mm-wave (5G FR-2) spectrum, provides an excellent trade-off between network capacity and coverage. Such spectrum portion constitutes a yet-to-explore third frequency range (FR-3) for future 5G applications, and is foreseen to become the 6G mid-band, devoted to crowded urban area coverage. This work proposes a technological platform able to deliver CMOS-compatible, on-chip multi-frequency low-loss, wideband, and compact passband filters for cellular radios operating at mid-band frequencies, exploiting the micro-to-nano scaling of acoustic electromechanical resonators and filters. The presented results showcase the first-ever demonstrated low insertion loss bank of 7 nanoacoustic passive passband filters in the X-band, spanning more than 3 GHz of operation, all fabricated on the same substrate with state-of-the-art and low-complexity micro-machining process. Most of the filters showcase fractional bandwidths above 3% and sub-dB loss per stage, all in an extremely compact form factor, enabling the manufacturing of X-band filters and duplexers that can be integrated in mobile handsets at each antenna element. The novelty of the current results stems from the adoption of a high-crystallinity piezoelectric Sc-doped AlN thin film, together with an optimized resonator topology in terms of design and fabrication.

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“…They investigated the electric field induced inversion domains, as well as the non-switched domains at the bottom electrode interface, providing critical information for understanding the domain evolution process during polarization switching in wurtzite materials. Subsequently, the impact of the nitrogen-to-argon gas ratio and target power ratios, plasma modes, sputter power, deposition temperature, crystal orientation, film stress, surface roughness, Sc content, and deposition rate on ferroelectric properties of ScAlN have been intensively investigated [62,64,[144][145][146][147][148][149][150][151][152][153].…”

Section: Experimental Demonstration Of Ferroelectricity In Nitridesmentioning

confidence: 99%

Dawn of nitride ferroelectric semiconductors: from materials to devices

Wang

Mondal

et al. 2023

Semicond. Sci. Technol.

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III-nitride semiconductors are promising optoelectronic and electronic materials and have been extensively investigated in the past decades. New functionalities, such as ferroelectricity, ferromagnetism, and superconductivity, have been implanted into III-nitrides to expand their capability in next-generation semiconductor and quantum technologies. The recent experimental demonstration of ferroelectricity in nitride materials, including ScAl(Ga)N, BAlN, and hBN, has inspired tremendous research interest. Due to the large remnant polarization, high breakdown field, high Curie temperature, and significantly enhanced piezoelectric, linear, and nonlinear optical properties, nitride ferroelectric semiconductors have enabled a wealth of applications in electronic, ferroelectronic, acoustoelectronic, optoelectronic, and quantum devices and systems. In this review, the development of nitride ferroelectric semiconductors from materials to devices is discussed. While expounding on the unique advantages and outstanding achievements of nitride ferroelectrics, the existing challenges and promising prospects have been also discussed.

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Effect of Substrate-RF on Sub-200 nm Al0.7Sc0.3N Thin Films

Cited by 8 publications

References 41 publications

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Dawn of nitride ferroelectric semiconductors: from materials to devices

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