Effect of substrate polarity on the optical and vibrational properties of (311)A and (311) B oriented InAlAs/InP heterostructures

Smiri, Badreddine; Saidi, F.; Mlayah, Adnen; Maâref, H.

doi:10.1016/j.physe.2019.04.020

Cited by 7 publications

(7 citation statements)

References 33 publications

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“…To accurately determine the peak frequencies of the various Raman modes, the Raman spectra were deconvoluted using a Lorentzian shape function. previous studies [27,31], the relationship between the shift of InP-like LO frequency and the residual stress in the In x Al 1−x As epitaxial layer is given by: [10,11]. These results suggest that clustering has a minimal impact on sample S1, and higher In content leads to improved optical quality.…”

Section: C Raman Resultsmentioning

confidence: 62%

“…Figure 3 presents typical Raman scattering spectra at 300 K in In x Al 1−x As of various x In . The disorder-activated longitudinal acoustic (DALA) phonon of In x Al 1−x As with the middle composition range typically appears in the broad Raman band from 90 to 150 cm-1 [10,29]. This observation is attributed to the interactions between atomic clusters that occur during the growth of the epitaxial layer, leading to a disordered crystal arrangement at the interface.…”

Section: C Raman Resultsmentioning

confidence: 99%

“…This observation is attributed to the interactions between atomic clusters that occur during the growth of the epitaxial layer, leading to a disordered crystal arrangement at the interface. An increase in the degree of disorder (i.e., the alloy phase separating into indium-rich regions and aluminum-rich regions) contributes to an increase in dislocation density [10,29].…”

Section: C Raman Resultsmentioning

confidence: 99%

“…The di culty in achieving high-quality In x Al 1−x As layers stems from the substantial bond strength difference between In-As and Al-As, leading to structural, optical, and electrical limitations [9]. In particular, the indium concentration plays a crucial role in determining the interface quality between the epilayer and the substrate [10,11]. Improper indium concentration can induce cluster formation and high concentrations of point defects, severely degrading the device performance [12,13].…”

Section: Introductionmentioning

confidence: 99%

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Influence of Indium Composition on InAlAs QCLs

Badreddine,

Ilkay,

Abir

et al. 2024

Preprint

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In this work, we explored the impact of indium composition (x) on the structural and optical characteristics of InxAl1-xAs layers within the context of quantum cascade laser (QCL) structures grown on InP (100) substrates using the Metal Organic Vapor Phase Epitaxy (MOVPE) method. The quality of the InxAl1-xAs QCL is notably influenced by the growth with low indium composition, evident in terms of crystallinity, interface sharpness, and optical properties. The properties of the InAsP layer at the InP/ InxAl1-xAs junction are particularly sensitive to the indium composition. A drop below 0.52 in indium composition leads to a substantial lattice mismatch between the InxAl1-xAs layer and the InP substrate, typically exceeding [3 8]%. This mismatch induces defects or traps within the bandgap, significantly impacting carrier localization in this system. Our study demonstrates that cultivating InxAl1-xAs with a low indium concentration results in a strained (lattice-mismatched) InxAl1-xAs layer. This finding is significant as it can be leveraged to balance strain in high indium content InGaAs layers, particularly in the context of applications involving quantum cascade lasers.

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Section: C Raman Resultsmentioning

confidence: 62%

Section: C Raman Resultsmentioning

confidence: 99%

Section: C Raman Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Influence of Indium Composition on InAlAs QCLs

Badreddine,

Ilkay,

Abir

et al. 2024

Preprint

Self Cite

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“…In all samples, the two main phonon bands are InAs-like and AlAs-like in the ranges from 220 to 250 cm −1 and from 350 to 380 cm −1 , respectively. 23,24) In addition to these two bands, Fig. 4(a) shows the disorder-activated modes in the low-energy range.…”

Section: Resultsmentioning

confidence: 99%

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Smiri¹,

Saidi²,

Mlayah³

et al. 2020

Jpn. J. Appl. Phys.

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We report on combined photoluminescence (PL) and micro-Raman microscopy to study the effect of the V/III flux ratio on InAlAs ternary alloy grown on (311)A InP by metal-organic chemical vapor deposition. The PL of the type-II transition was studied in a wide range of temperatures (10–300 K) and excitation intensities. As the V/III flux ratio increased from 25 to 125, a redshift of the type-II transition was observed. Then, micro-Raman investigations showed the presence of an LO mode related to LO-like InAs in InAsP alloy at the inverted interface in our samples. Furthermore, we discuss the effect of laser excitation wavelength on the Raman spectrum. We also note that phonon peaks are very sensitive to different excitation sources (364 to 638 nm). At lower frequencies, disorder-activated longitudinal acoustic phonons are also observed, which consider the presence of potential fluctuations. This last generate the carrier’s localization, which confirmed by PL measurements. In all samples, a blueshift of the type-II transition is noted with increasing the excitation power, which may reflect the presence of carrier localization, whereas the temperature-dependent PL peak energy displayed unusual behavior, such as consecutive red–blue–redshift (S-shaped) behavior and an inverted N-shape in the full width at half maximum. These unusual behaviors are explained by carriers captured by localized recombination centers. Moreover, in the room temperature PL spectra two types of emission were detected at 1.3 and 1.55 μm.

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