Effect of Substrate Orientation on Growth Rate and Doping Level of Vapour Grown GaAs. Interval (111)A—(100)—(111)B

Lavrentyeva, L. G.; Kataev, Yu. G; Moskovkin, V. A.; Yakubenya, M. P.

doi:10.1515/9783112653623-005

Kristall Und Technik Band 6, Heft 5 1971

DOI: 10.1515/9783112653623-005

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Effect of Substrate Orientation on Growth Rate and Doping Level of Vapour Grown GaAs. Interval (111)A—(100)—(111)B

L. G. Lavrentyeva¹,

Yu. G Kataev²,

V. A. Moskovkin³

et al.

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Effect of Substrate Orientation on Growth Rate and Doping Level of Vapour Grown GaAs. Interval (111)A—(100)—(111)B

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