Effect of substrate on the characteristics of manganese(IV) oxide thin films prepared by atomic layer deposition

Nilsen, Ola; Foss, Sean Erik; Fjellvåg, Helmer; Kjekshus, Arne

doi:10.1016/j.tsf.2004.04.055

Cited by 48 publications

(38 citation statements)

References 52 publications

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“…The value of the sheet resistance obtained in this work is of the same order of magnitude with those reported in the literature [6,18]. In the case of Li-Mn-O thin film, the value of 3.63 × 10 5 ohm/square and 4.9 ohm-cm was obtained for sheet resistance and resistivity respectively.…”

supporting

confidence: 88%

“…The SEM images of the Mn-O thin film (Fig. 5a) showed the morphology to be needle-like rods which are polycrystalline in nature, characteristic of MnO 2 [18]. A closer observation of the micrograph showed that the films are composed of hollow needle-like rods with coarse, continuous and uniformly distributed crystalline grains in the background.…”

Section: Surface Morphology and Chemical Characterization Of The Filmsmentioning

confidence: 92%

“…Various methods of preparing Mn-O and LiMn-O thin film systems have been reported [18][19][20][21]. The use of MOCVD (Metal organic chemical vapor deposition) has become one of the most important technique for preparing thin films and coatings of large variety of materials essential to micro electronics fabrication where some of the most sophisticated conditions must be met.…”

Section: Introductionmentioning

confidence: 99%

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Some Properties of Manganese Oxide (Mn-O) and Lithium Manganese Oxide (Li-Mn-O) Thin Films Prepared via Metal Organic Chemical Vapor Deposition (MOCVD) Technique

Oyedotun¹,

Eleruja²,

Olofinjana³

et al. 2015

JMSE-B

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°C for approximately 2 h. The films were characterized using RBS (Rutherford backscattering spectroscopy), SEM (Scanning electron microscopy), XRD (X-ray diffraction), van der Pauw method and Ultraviolet-Visible Spectroscopy. The compositional analysis showed that the Mn:O ratio is 0.2:0.8 while that of Li:Mn:O was found to be 0.47:0.24:0.29. SEM micrograph showed that Mn-O film is composed of hollow needle-like rods with coarse, continuous and uniformly distributed polycrystalline grains rod-like, having average grain size estimated to be below 10µm while those of Li-Mn-O showed that the film is dendritic and polycrystalline in which some of the grains were found to lump together. XRD also showed the polycrystalline nature of the films with orthorhombic MnO 2 and orthorhombic Li 3 MnO 4 structures for Mn-O and Li-Mn-O thin films respectively. Results of characterization also showed that the films are semiconducting, highly absorbing in the visible region with absorption edges observed at wavelengths of 525 nm and 550 nm, corresponding to direct optical band gaps of 2.36 eV and 2.25eV for Mn-O and Li-Mn-O thin films respectively.

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supporting

confidence: 88%

Section: Surface Morphology and Chemical Characterization Of The Filmsmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

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Some Properties of Manganese Oxide (Mn-O) and Lithium Manganese Oxide (Li-Mn-O) Thin Films Prepared via Metal Organic Chemical Vapor Deposition (MOCVD) Technique

Oyedotun¹,

Eleruja²,

Olofinjana³

et al. 2015

JMSE-B

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“…29,30 In contrast, MnO ALD is a very robust ALD system. 31 MnO 2 films were prepared using MnO ALD and subsequently electrochemically oxidized to MnO 2 .…”

Section: Methodsmentioning

confidence: 99%

Sodium Charge Storage in Thin Films of MnO₂Derived by Electrochemical Oxidation of MnO Atomic Layer Deposition Films

Young

Neuber

Cavanagh

et al. 2015

J. Electrochem. Soc.

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Sodium charge storage in ultrathin MnO2 films was studied using cyclic voltammetry (CV) and electrochemical quartz crystal microbalance (EQCM) measurements. The MnO2 films were fabricated by electrochemical oxidation of MnO films grown by atomic layer deposition (ALD). CV analysis confirmed that oxidation of MnO to MnO2 involved two moles of electrons per mole of Mn in the MnO ALD film. Scanning electron microscopy (SEM) images revealed that electrochemical oxidation of MnO led to the formation of MnO2 nanosheets. EQCM measurements suggested that Na+ cations participate in charge storage in MnO2. X-ray photoelectron spectroscopy (XPS) experiments measured sodium in MnO2 after both positive/anodic and negative/cathodic voltage sweeps. The stoichiometry was Na0.25MnO2 after negative/cathodic voltage sweeps. Approximately one-half of the sodium was removed after positive/anodic voltage sweeps. The areal capacitance increased progressively with initial MnO ALD film thickness. This increase in areal capacitance is consistent with bulk charge storage in MnO2 or higher surface area of MnO2 nanosheets resulting from larger MnO ALD film thicknesses. Experiments at varying scan rates indicated that charge storage in MnO2 originates from a combination of capacitive and diffusive processes. Bulk charge storage makes a significant contribution to total charge storage in the thicker MnO2 films.

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“…As a comparison, ALD growth using Mn(thd) 3 and ozone afforded MnO 2 films within an ALD window of 140-230 C. 45,46 In the present manganese borate ALD process, the ozone pulses may oxidize surface-bound MnTp species to manganese(IV) borates that also contain oxo ligands. Since high valent manganese oxides are strong oxidants, 45,46 the subsequent pulse of 1 likely leads to oxidation of one Tp ligand by the surface oxo groups and loss of volatile products that remove an average of one boron atom per molecule of 1. In contrast to the range of higher oxidation state manganese oxides, cobalt oxides are limited to CoO and Co 3 O 4 , 47 neither of which is a strong oxidant.…”

Section: Discussionmentioning

confidence: 99%

Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone

Klesko

Bellow

Saly

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone Klesko, Joseph P.; Bellow, James A.; Saly, Mark J.; Winter, Charles H.; Julin, Jaakko; Sajavaara, Timo Klesko, J. P., Bellow, J. A., Saly, M. J., Winter, C. H., Julin, J., & Sajavaara, T. (2016 C. The growth rate for the cobalt borate process was 0.39-0.42 Å /cycle at 325 C. X-ray diffraction of the as-deposited films indicated that they were amorphous. Atomic force microscopy of 35-36 nm thick manganese borate films grown within the 300-350 C ALD window showed root mean square surface roughnesses of 0.4-0.6 nm. Film stoichiometries were assessed by x-ray photoelectron spectroscopy and time of flight-elastic recoil detection analysis. The differing film stoichiometries obtained from the very similar precursors MnTp 2 and CoTp 2 are proposed to arise from the oxidizing ability of the intermediate high valent manganese oxide layers and lack thereof for cobalt.

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Effect of substrate on the characteristics of manganese(IV) oxide thin films prepared by atomic layer deposition

Cited by 48 publications

References 52 publications

Some Properties of Manganese Oxide (Mn-O) and Lithium Manganese Oxide (Li-Mn-O) Thin Films Prepared via Metal Organic Chemical Vapor Deposition (MOCVD) Technique

Some Properties of Manganese Oxide (Mn-O) and Lithium Manganese Oxide (Li-Mn-O) Thin Films Prepared via Metal Organic Chemical Vapor Deposition (MOCVD) Technique

Sodium Charge Storage in Thin Films of MnO₂Derived by Electrochemical Oxidation of MnO Atomic Layer Deposition Films

Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone

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Effect of substrate on the characteristics of manganese(IV) oxide thin films prepared by atomic layer deposition

Cited by 48 publications

References 52 publications

Some Properties of Manganese Oxide (Mn-O) and Lithium Manganese Oxide (Li-Mn-O) Thin Films Prepared via Metal Organic Chemical Vapor Deposition (MOCVD) Technique

Some Properties of Manganese Oxide (Mn-O) and Lithium Manganese Oxide (Li-Mn-O) Thin Films Prepared via Metal Organic Chemical Vapor Deposition (MOCVD) Technique

Sodium Charge Storage in Thin Films of MnO2Derived by Electrochemical Oxidation of MnO Atomic Layer Deposition Films

Unusual stoichiometry control in the atomic layer deposition of manganese borate films from manganese bis(tris(pyrazolyl)borate) and ozone

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Sodium Charge Storage in Thin Films of MnO₂Derived by Electrochemical Oxidation of MnO Atomic Layer Deposition Films