1995
DOI: 10.1016/0257-8972(95)02594-4
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Effect of substrate bias on sputter-deposited TiCx, TiNy and TiCxNy thin films

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Cited by 45 publications
(28 citation statements)
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“…The final structure, stoichiometry, and properties of TiN x thin films mainly depend on the N 2 flow and the value of V b applied to the substrate. 7,8 As an example, we report here on the latter. Therefore, in order to develop films with different stoichiometries, deposition was carried out at various values of bias voltage V b between 0 and 2220 V and fixed N 2 flow.…”
Section: Methodsmentioning
confidence: 97%
“…The final structure, stoichiometry, and properties of TiN x thin films mainly depend on the N 2 flow and the value of V b applied to the substrate. 7,8 As an example, we report here on the latter. Therefore, in order to develop films with different stoichiometries, deposition was carried out at various values of bias voltage V b between 0 and 2220 V and fixed N 2 flow.…”
Section: Methodsmentioning
confidence: 97%
“…They show metallic as well as covalent and ionic properties, exhibiting a unique combination of characteristics that allow them to be serious candidates for a wide range of hightechnology applications [1][2][3][4][5][6]. Beyond these technological applications that can range from several examples in metallurgy, aeronautics, electronics and medicine, used to protect and to decrease wear in a variety of components, there is also the more specific case of fundamental research, where these carbides have been revealed to be a subject of great interest [7,8]. The wide structural features revealed with, for instance, the variation of the C content, is one of the factor that is interesting for the research teams [1][2][3][4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…Carbide films can be deposited by a variety of chemical vapour deposition (CVD) and physical vapour deposition (PVD) techniques [8,[10][11][12][13][14][15]. Usually the CVD methods are limited owing not only to environmental problems, but also to the high temperatures involved during processing.…”
Section: Introductionmentioning
confidence: 99%
“…In conventional anodisation process, anatase TiO 2 hardly forms on titanium surfaces because the passive amorphous films produced in these processes act as a barrier to prevent further anodisation. Montero 41 showed that an oxide layer could be grown readily on a TiN film, as compared to an anodic oxide film on titanium. The reason for this is that TiN is overstoichiometric with a weak bond existing between Ti and N atoms.…”
Section: Resultsmentioning
confidence: 99%