Effect of structure on the quantum efficiency and R0A product of lead-tin chalcogenide photodiodes

Rogalski, Antoni; Rutkowski, Jarosław

doi:10.1016/0020-0891(82)90044-6

Cited by 23 publications

(7 citation statements)

References 16 publications

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“…The diffusion current that is the fundamental current in a p-n junction detector determines (R 0 A) Auger and (R 0 A) rad , shown as follows [12] (R 0 A) j = KT q 2 D p n L p n 2 (3)…”

Section: The Auger Mechanism and Radiative Mechanismmentioning

confidence: 99%

Analysis of the product and detectivity in a GaInAsSb infrared photovoltaic detector

Tian

Zhou

Zhang

et al. 1998

J. Phys. D: Appl. Phys.

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In this paper a theoretical analysis of the product and the detectivity in a GaInAsSb infrared photovoltaic detector is reported, dependent on the four fundamental kinds of noise mechanism and the quantum efficiency. The considerations are carried out for near room temperature and m wavelength. The analytical results show that the noise mechanisms can be reduced, and correspondingly the performance of such detectors can be improved.

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“…The diffusion current that is the fundamental current in a p-n junction detector determines (R 0 A) Auger and (R 0 A) rad , shown as follows [12] (R 0 A) j = KT q 2 D p n L p n 2 (3)…”

Section: The Auger Mechanism and Radiative Mechanismmentioning

confidence: 99%

Analysis of the product and detectivity in a GaInAsSb infrared photovoltaic detector

Tian

Zhou

Zhang

et al. 1998

J. Phys. D: Appl. Phys.

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“…As temperature decreases, both the responsivity and cutoff wavelength increase. Under the zero-bias photovoltaic mode, the improved responsivity is a result of the increased quantum efficiency (η p ) due to the improvement of L e and α, which can be described as follows η normalp = ( 1 − r ) α L normale α 2 L normale 2 − 1 { α L e − e − α x p sh false( x normalp / L normale false) ch false( x normalp / L normale false) − α L e e − α x p } where r is the illuminated junction surface reflection coefficient, x p is the distance from the PbSe film to the junction boundary. Additionally, as shown in the inset of Figure a, the cutoff wavelength of the normalized responsivity gradually increases (red-shift) as the temperature decreases.…”

Section: Resultsmentioning

confidence: 99%

High-Performance Uncooled Mid-Infrared Detector Based on a Polycrystalline PbSe/CdSe Heterojunction

Qiu

McDowell

et al. 2023

ACS Appl. Mater. Interfaces

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Developing high-performance, uncooled mid-wavelength infrared (MWIR) detectors is a challenging task due to the inherent physical properties of materials and manufacturing technologies. In this study, we designed and manufactured an uncooled polycrystalline PbSe/CdSe heterojunction photovoltaic (PV) detector through vapor physical deposition. The resulting 10 μm × 10 μm device exhibited a peak detectivity of 7.5 × 109 and 3 × 1010 cm·Hz1/2·W–1 at 298 and 220 K, respectively, under blackbody radiation. These values are comparable to those of typical PbSe photoconductive detectors fabricated through standard chemical bath deposition. Additionally, the sensitization-free process used to create these PbSe/CdSe PV detectors allows for high replicability and yield, making them promising candidates for low-cost, high-performance, uncooled MWIR focal plane array imaging in commercial applications.

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“…It originates from the quasi-neutral regions where the thermally generated minority carriers diffuse through the junction for keeping charge neutrality. For the diffusion mechanism, R 0diff A is expressed as follows [18]:…”

Section: Diffusion Mechanismmentioning

confidence: 99%

Performance analysis of an N-structure type-II superlattice photodetector for long wavelength infrared applications

Jiang

et al. 2016

Journal of Alloys and Compounds

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Effect of structure on the quantum efficiency and R0A product of lead-tin chalcogenide photodiodes

Cited by 23 publications

References 16 publications

Analysis of the product and detectivity in a GaInAsSb infrared photovoltaic detector

Analysis of the product and detectivity in a GaInAsSb infrared photovoltaic detector

High-Performance Uncooled Mid-Infrared Detector Based on a Polycrystalline PbSe/CdSe Heterojunction

Performance analysis of an N-structure type-II superlattice photodetector for long wavelength infrared applications

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