Analysis of the product and detectivity in a GaInAsSb infrared photovoltaic detector

Abstract

In this paper a theoretical analysis of the product and the detectivity in a GaInAsSb infrared photovoltaic detector is reported, dependent on the four fundamental kinds of noise mechanism and the quantum efficiency. The considerations are carried out for near room temperature and m wavelength. The analytical results show that the noise mechanisms can be reduced, and correspondingly the performance of such detectors can be improved.

The Analysis of the Performance for P–p–n and N–n–p Hetero- and Homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 Photodetectors

“…In the following, the detectivity for the above two cases is calculated at l = 2.32 mm. Because the absorption of incident photons is in the n±p homojunction, and as we know that all kinds of noise mechanism are independent, the influence of the parameters in n-and p-side Ga 0.8 In 0.2 As 0.19 Sb 0.81 material on the performance of these two structure detectors is the same as that one for the n±p homojunction structure analyzed in a previous paper [11]. For the two mentioned structures, therefore, in this paper only the influence (on R 0 A, h and detectivity) of the parameters in the wide bandgap GaSb material is discussed in detail.…”

“…3a, because of the lower carrier concentration of P 1 -GaSb, the hole tunneling through the P 1 ±p 2 heterojunction does not appear. Except for the GR mechanism, in the P 1 ±p 2 heterojunction other noise mechanisms are similar to those in the n±p homojunction structure [11]. The high carrier concentration in each layer improves (R 0 A) GR , but at the same time the tunneling mechanism strongly reduces R 0 A.…”

“…When using a wide bandgap material as epitaxial layer, the cut-on and cut-off wavelengths can be tailored because the wide bandgap material is considered as a window layer, in which the high-energy photons are absorbed by the wide bandgap material, while the low-energy photons cross the wide bandgap material and are absorbed by the narrow bandgap material near the heterointerface, which is useful to select the working-wavelength for detectors. In the n±p homojunction, four kinds of noise mechanism are considered: the Auger and radiative mechanisms in the n-and p-regions, the generation±recombination (GR) mechanism in the n±p depletion region and the direct-band tunneling through the n±p depletion region [11]. In addition, in the 414 Yuan Tian et al N±n and P±p isotype heterojunctions, besides the GR mechanism, the heterojunction tunneling mechanism is an important noise mechanism to effect the detector performance.…”

Analysis of optical properties of InGaSb PIN photdiodes

“…Finally, the detectivity D * [6] is obtained from the equation given in as: For the calculation 100µm square mesa In y Ga 1-y Sb (y=0.182) PIN-diode is used. The carrier mobilities µ p and µ n are equal to 468 and 2164 cm 2 /V-s, respectively.…”

“…All the results obtained from modeling are fitted with experimental data and a satisfactory match is found. For further study, the effects on the spectral response due to the variation of temperature, dislocations, photon energy, diffusion depth, and carrier concentration can also be analyzed [6]. The electron and hole ionization coefficients for InGaSb PIN photodiodes [8] can also be modeled in a similar fashion.…”