Effect of Stress State on Growth of Interfacial Intermetallic Compounds Between Sn-Ag-Cu Solder and Cu Substrates Coated with Electroless Ni Immersion Au

Ngoh, S.L.; Zhou, Wei; Pang, J.H.L.

doi:10.1007/s11664-008-0540-2

Cited by 18 publications

(7 citation statements)

References 32 publications

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“…(3). This stress value seems small compared with others' work on the influence of external in-plane stress on Cu-Sn IMC [8]. But the yield strength of pure tin at 150 °C is 7.6 MPa [11].…”

Section: Methodsmentioning

confidence: 66%

“…Among the literature, Vianco et al [7] first reported the influence of external stress on the IMC growth during aging. Ngoh et al [8] designed a C-ring to induce in-plane stress on the solder/substrate interface, and an increase in IMC growth rate was found when compressive stress was applied. Similar results were also revealed by Hu et al [9].…”

Section: Introductionmentioning

confidence: 99%

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Influence of External Interface Normal Stress on the Growth of Cu–Sn IMC During Aging

Wang

Chen

Liu

2020

Acta Metall. Sin. (Engl. Lett.)

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A U-shape clamp was designed to apply stress perpendicular to the interface of Cu/Sn/Cu solder joints, and its influence on the growth behavior of Cu-Sn intermetallic compound (IMC) during thermal aging at 150 °C was investigated. The results show that compared with the sample at general stress-free state, the growth rate of IMC under compression is faster, while that under tension is slower. Moreover, the interface between IMC and Sn is smoother under compressive stress, and the corresponding IMC grains are smaller and more uniform than that under tensile stress. According to the growth kinetic analysis, the growth of IMC under general, compressive and tensile states is all controlled by the combination of grain boundary diffusion and volume diffusion with a similar growth exponent (n ≈ 0.4). However, external stress can affect the Ostwald ripening process of grain growth, causing a change of grain size and grain boundary density in the IMC layer. As a result, the IMC growth behavior at the interface of the solder joint will be affected by the applied external normal stress.

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“…(3). This stress value seems small compared with others' work on the influence of external in-plane stress on Cu-Sn IMC [8]. But the yield strength of pure tin at 150 °C is 7.6 MPa [11].…”

Section: Methodsmentioning

confidence: 66%

Section: Introductionmentioning

confidence: 99%

Influence of External Interface Normal Stress on the Growth of Cu–Sn IMC During Aging

Wang

Chen

Liu

2020

Acta Metall. Sin. (Engl. Lett.)

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“…13(a) and (b). It has been reported that compressive stress leads to outdiffusion of copper and surface metallization into solder, and facilitates IMC growth [22]. Hence, it can be estimated that the fatigue life of the solder interconnection will deteriorate as the interposer size increases, due to increase in the warpage and accelerated growth of IMC layer.…”

Section: B Effect Of Interposer Size On Interconnection Reliabilitymentioning

confidence: 99%

Finite Element Analysis and Experiment Validation of Highly Reliable Silicon and Glass Interposers-to-Printed Wiring Board SMT Interconnections

Qin

Kumbhat

Raj

et al. 2014

IEEE Trans. Compon., Packag. Manufact. Technol.

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Interposers that support high input/output density are becoming critical for system miniaturization and high performance. Silicon and glass are emerging as the primary candidates for such high-density interposers, due to their outstanding dimensional stability, which enables layer-to-layer wiring with small vias. However, silicon and glass have very low coefficient of thermal expansion (CTE), 3-8 ppm/°C, compared with organic printed wiring board (PWB), which has a CTE of 12-18 ppm/°C. The large CTE mismatch between interposer and board raises reliability concern with the ball grid array interconnections. In this paper, compliant dielectric build-up layers laminated on silicon and glass interposers are explored as stress buffers to reduce the strain accumulated in solder interconnections. Finite element method was used to analyze the thermo-mechanical reliability of the interconnections, and predict the fatigue life of solder joints. Three types of low-CTE interposer materials were studied, low-CTE glass (3 ppm/°C), high-CTE glass (8 ppm/°C), and silicon (2.7 ppm/°C). Test vehicles with the above three interposers at a size of 7.2 mm × 7.2 mm with 25-µm-thick polymer stress buffers laminated on both sides were fabricated, and assembled on organic FR-4 boards using Sn96.5Ag3Cu0.5 solder. The reliability of the solder interconnections, with the three different test vehicles, was studied using thermal cycling test from −40°C to 125°C. The high-CTE glass sample was observed to survive 1800 thermal cycles before the first failure was detected in one of the corner joints. Experimental results of fatigue life of interconnections agreed well with finite element modeling results, and reliable interconnections between low-CTE interposer and organic PWB using stress buffers were demonstrated. Based on the validated model, parametric study was conducted to explore the influence of geometry and material properties of interposer on the thermo-mechanical reliability of the solder interconnections, as a guideline for interconnection design of similar interposers.Index Terms-Compliant dielectric, finite element method, model validation, reliability test, thin silicon or glass interposer.

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“…Vianco et al 6 reported that residual stresses enhance the growth of an intermetallic compound layer at the interface between Au–Pt–Pd foil and Sn–Pb eutectic alloy. Ngoh et al 7 and Liao et al 8 also reported enhancement of the interfacial reaction due to stress. These reports show that the stress in the iron layer affects the interfacial reaction between the solid iron layer and the solid solder alloy.…”

Section: Introductionmentioning

confidence: 95%

Enhancement of interfacial reaction between solid iron and molten tin by mechanical actions

Katô

Husain²,

Senda

et al. 2014

Materials Science and Technology

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The influences of mechanical actions on interfacial reactions between an iron plate and molten tin were examined. Tensile and compressive stresses up to 100 MPa on the iron plate did not significantly change the thickness of the reaction layer and the corrosion depth of the plate. However, when the iron plate was subjected to repeated rubbing with tungsten and Pb–Sn eutectic alloy wires and when it was immersed in the rotating molten tin, the reaction layer thickness decreased and the corrosion depth of the iron plate increased. From these results, it was concluded that the corrosion of the iron plate in the molten tin was enhanced by repeated rubbing with the solder alloy on the plated iron layer and also by flow of molten solder alloy down the surface of the soldering tip in the soldering process.

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Effect of Stress State on Growth of Interfacial Intermetallic Compounds Between Sn-Ag-Cu Solder and Cu Substrates Coated with Electroless Ni Immersion Au

Cited by 18 publications

References 32 publications

Influence of External Interface Normal Stress on the Growth of Cu–Sn IMC During Aging

Influence of External Interface Normal Stress on the Growth of Cu–Sn IMC During Aging

Finite Element Analysis and Experiment Validation of Highly Reliable Silicon and Glass Interposers-to-Printed Wiring Board SMT Interconnections

Enhancement of interfacial reaction between solid iron and molten tin by mechanical actions

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