Effect of stress layer on thermal properties of SnSe2 few layers

Anisotropic Thermal Conductivity of Crystalline Layered SnSe2

“…In particular, we found that phonons with MFP ranging from 1 to 53 nm and from 1 to 30 nm contribute to 50% of the k r and k z , respectively. Similar observations were also predicted by Wang et al 6 and Ding et al 12 in SnSe 2 bulk using DFT calculations, while the same 32,33 and cross-plane 19,34 Fuchs−Sondheimer (FS) fits to the experimental data are indicated with black and red dashed lines, respectively. The light gray and red areas display the calculated in-plane and cross-plane bulk thermal conductivities taken from the literature.…”

“…The crystalline SnSe 2 exhibits two Raman active vibrational modes at 113 cm −1 (E g ) and 180 cm −1 (A 1g ), in agreement with previous reports. 19,26 The k r of suspended SnSe 2 films at room temperature was measured by using our steady-state two-laser Raman thermometry technique. 27−29 In this approach, a hot spot is produced by a heating laser with wavelength λ 1 = 405 nm fixed in the center of a suspended film, while a second laser with λ 2 = 532 nm measures the temperature distribution based on a calibration of its Raman spectra with temperature (see Figure 2a).…”

“…While extensive electrical and optical characterization of SnSe 2 is available, − experimental studies on the intrinsic thermal properties of SnSe 2 are few and far between. , To date, the thickness-dependence of the in-plane thermal conductivity ( k r ) has been investigated only in a few samples grown by chemical vapor deposition in a narrow range of thickness using the traditional optothermal Raman technique . Moreover, there are no reports on measurements of the cross-plane thermal conductivity ( k z ) in SnSe 2 ; thus its anisotropic thermal properties have so far not been experimentally investigated.…”

Controlled synthesis of few-layer SnSe2 by chemical vapor deposition

“…Better heat dissipation may be one of the biggest challenges in electronic devices, as the performance and service life of the device are greatly affected by the self-heating effect. 29,30 For this problem, it is important to investigate thermal property of materials. 13 Raman spectroscopy can be used to characterize the lattice vibrations of materials rapidly and non-destructively, and provide information of lattice thermal property.…”

“…There are several reasons for the temperature dependence of Raman modes position, such as electron-phonon, anharmonic phonon-phonon interactions and thermal expansion. [29][30][31] SnSe 2 is a 2D layered material, its interlayer van der Waals interaction tends to lead lower interfacial thermal conductivity. A 1g mode corresponding to the out-of-plane vibration mode, this interlayer vibration is sensitive to temperature, and largely contributes to the total lattice thermal conductivity, so that the temperature dependence of A 1g mode was investigated.…”