Controlled synthesis of few-layer SnSe₂ by chemical vapor deposition

Abstract

Few-layer SnSe2 has intrinsic low thermal conductivity and unique phase transition from amorphous to crystalline state under laser irradiation.

Wafer‐Scale Growth of Vertical‐Structured SnSe2 Nanosheets for Highly Sensitive, Fast‐Response UV–Vis–NIR Broadband Photodetectors

“…In previous reports, SnSe 2 nanosheets were commonly grown using the CVD method at relatively high temperatures (>600 °C). [ 19,23,24 ] As shown in Figure a, high purity Se powder and SnI 2 powder were added to a hot‐wall furnace and placed in two separate Al 2 O 3 crucibles with the substrate on the other side. The temperature of the center zone was set at 600 °C, and a mixture of Ar and H 2 flows at ambient atmosphere was used.…”

Controllable Synthesis of Atomically Thin 1T‐SnSe2 Flakes and Its Linear Second Harmonic Generation with Layer Thickness

“…[35,36] Notably, in the published references for the synthesis of 2D 1T-SnSe 2 , the Se, SnI 2 precursors and mica substrates were placed in sequence in the APCVD chamber (under ≈5 sccm H 2 and ≈20 sccm Ar), leading to the formation of 2L and thicker flakes in the same sample. [10,37] In this work, to achieve the large-area uniform synthesis of 1L-, 2L-, and FL-SnSe 2 flakes, the locations of SnI 2 and Se precursors were deliberately reversed in the CVD system, i.e., the SnI 2 and Se precursors were put at upstream and downstream, respectively. This unique design is selected for significantly lowering the volatilization of the SnI 2 precursor, and thus to realize the uniform synthesis of 1T-SnSe 2 flakes with controlled thicknesses.…”

“…[ 35,36 ] Notably, in the published references for the synthesis of 2D 1T‐SnSe 2 , the Se, SnI 2 precursors and mica substrates were placed in sequence in the APCVD chamber (under ≈5 sccm H 2 and ≈20 sccm Ar), leading to the formation of 2L and thicker flakes in the same sample. [ 10,37 ]…”

Gate-controlled gas sensor utilizing 1D–2D hybrid nanowires network

“…The Raman peaks are ascribed to the in-plane A 1g mode and the out-of-plane E g mode, respectively (see inset of Figure 2 B) ( Shao et al., 2018 ). The weak intensity of the E g mode is attributed to the few scattering centers in the few-layered SnSe 2 ( An et al., 2020 ). The frequencies of these two characteristic Raman peaks depend on the number of layers of SnSe 2 ( Gonzalez and Oleynik, 2016 ; Zhang et al., 2018 ).…”