Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon

Misiuk, A.; Jung, W.; Sgorbini, Barbara; Jun, J.; Rozental, M.

doi:10.4028/www.scientific.net/ssp.57-58.393

Cited by 27 publications

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“…Above ≈ 820 K these thermal donors decay and in the temperature range ≈ 8201170 K the generation of new thermal donors with the higher values of ionization energies occurs [2]. The origin of oxygen related new donors is related to oxygen precipitates [2,3].…”

Section: Introductionmentioning

confidence: 99%

“…Electronic, mechanical, and optical properties of Cz-Si samples have been found to depend * corresponding author; e-mail: i_korobeynikov@mail.ru, highpressgroup@mail.ru on the state of oxygen-defect system [2,3]. In Refs.…”

Section: Introductionmentioning

confidence: 99%

“…The energies of these donor states estimated using both Hall eect and deep-level transient spectroscopy (DLTS) correspond to ≈ 0.1316 and 0.06 0.07 eV [2]. The above annealing is known to change the sign of conductivity of Cz-Si samples from p-type to n-type [3]. Above ≈ 820 K these thermal donors decay and in the temperature range ≈ 8201170 K the generation of new thermal donors with the higher values of ionization energies occurs [2].…”

Section: Introductionmentioning

confidence: 99%

“…The interstitial oxygen concentration was determined by the Fourier transform infrared spectrometry (FTIR), using the conversion factor value equal to 2.45 × 10 17 cm −3 (ASTM F 21-83 standard) [3]. The details are described in [3]. The properties of pre-treated Cz-Si samples are listed at Table. One can see that in the view of the pre-treatment performed the samples contain both thermal donors, as well as new thermal donors.…”

Section: Introductionmentioning

confidence: 99%

“…No. The interstitial oxygen concentration was determined by the Fourier transform infrared spectrometry (FTIR), using the conversion factor value equal to 2.45 × 10 17 cm −3 (ASTM F 21-83 standard) [3]. The details are described in [3].…”

Section: Introductionmentioning

confidence: 99%

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High-Pressure Treatment up to 25~GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects

2013

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The thermoelectric properties of a set of single crystalline Si wafers with dierent oxygen concentration grown by the Czochralski technique have been studied at ultrahigh pressures up to 25 GPa. The dependence of semiconductormetal transition pressure at Czochralski grown Si on the concentration cO of the interstitial oxygen was found to present a convex curve with the maximum near cO ≈ 9 × 10 17 cm −3 . The high pressure thermoelectric power method seems to be suitable for characterization of impurity-defect structure of Si wafers.For Si1−xGex crystals (1% < x < 3%) the strong changes of both the value and the sign of thermoelectric power have been observed at pressures much less than ones of Si-I → Si-II transition. From nanoindentation data the phase transition Si-I → Si-II, corresponding to semiconductormetal electronic transformation has been detected at the loading up to ≈ 10 mN. These ndings suggest a way for creation of integrated circuits, in which zones with dierent types of conductivity and hence dierent p−n, p−n−p etc. structures may be written by applied stress at nanoscale level, and the control on the value of the above stresses now is possible by the proposed nanoindentation technique.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%