Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures

The occurrence of strain is inevitable for the growth of lattice mismatched heterostructures. It affects greatly the mechanical, electrical and optical properties of nano-objects. It is also the case for nanowires which are characterized by a high surface to volume ratio. Thus, the knowledge of the strain distribution in nano-objects is critically important for their implementation into devices. This paper presents an experimental data for II-VI semiconductor system. Scanning nanobeam electron diffraction strain mapping technique for hetero-nanowires characterized by a large lattice mismatch (>6% in the case of CdTe/ZnTe) and containing segments with nano-twins has been described. The spatial resolution of about 2 nm is 10 times better than obtained in synchrotron nanobeam systems. The proposed approach allows us to overcome the difficulties related to nanowire thickness variations during the acquisition of the nano-beam electron diffraction data. In addition, the choice of optimal parameters used for the acquisition of nano-beam diffraction data for strain mapping has been discussed. The knowledge of the strain distribution enables, in our particular case, the improvement of the growth model of extremely strained axial nanowires synthetized by vapor-liquid solid growth mechanism. However, our method can be applied for the strain mapping in nanowire heterostructures grown by any other method.

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“…It can be used, for instance, to fine-tune the band gap structure. This has been shown for both, planar objects [11] and NWs [12,13].…”

Section: Introductionsupporting

confidence: 55%

Precise strain mapping of nano-twinned axial ZnTe/CdTe hetero-nanowires by scanning nanobeam electron diffraction

2022

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“…Polarization at GaN/AlGaN quantum wells was a well‐proved approach to control the wavelength of intersubband transition. [ 25,26 ] In this study, the pressure sensitivity of GaN/AlN quantum well has been calculated to reach up to 0.012 GPa −1 at 4.69 GPa, compared with 3.32 × 10 –5 GPa −1 based on the interband transition. [ 19 ] The intersubband pressure sensitivity can be increased from 0.007 to 0.010 GPa −1 at 1.67 µm, indicating a 43% increase by the piezo‐phototronic effect.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Dan

Nie

et al. 2021

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III‐nitride semiconductors play much more important roles in the areas of modern photoelectric applications, whereas strong polarization in their heterostructures is always a challenge to restrict the efficiency and performance of photoelectric devices. In this study, piezo‐phototronic effect on near‐infrared intersubband absorption is explored based on polar GaN/AlN quantum wells. The results show that externally applied pressure leads to the redshift of absorption wavelength by reducing polarization field of the quantum well. The sensitivity to estimate pressure‐dependent intersubband absorption wavelength is almost two orders of magnitude higher than interband photoelectric devices. Additionally, such sensitivity is further enhanced by 2.6 times at 20 GPa as a result of piezo‐phototronic effect. This study paves avenue for designing high‐performance near‐infrared piezo‐phototronic devices based on intersubband transition.

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Growth of AlGaN-based multiple quantum wells on SiC substrates

Han

Zhang

et al. 2018

J Mater Sci: Mater Electron

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Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures

Cited by 9 publications

References 31 publications

Precise strain mapping of nano-twinned axial ZnTe/CdTe hetero-nanowires by scanning nanobeam electron diffraction

Precise strain mapping of nano-twinned axial ZnTe/CdTe hetero-nanowires by scanning nanobeam electron diffraction

High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Growth of AlGaN-based multiple quantum wells on SiC substrates

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