Piezotronics and piezo-phototronics have received increasing attention in flexible energy-harvesting devices, self-powered sensor systems utilizing piezoelectric semiconductor materials, such as ZnO, GaN and monolayer MoS 2. Piezoelectric potentials induced by the externally applied strain can effectively control the generation, recombination and transport of the charge carriers for achieving high-performance devices. In this study, we describe the piezotronics effect on the GaN/InN/GaN quantum well, which can induce performances resembling those of topological insulators by a piezoelectric field polarized under the externally applied mechanical strain. The transport properties of bulk and edge states of this quantum well device have been investigated by calculating the electron density distribution 1 These authors contributed equally to this work. 2 under different widths of the quantum point contact (QPC), which is the origin of more conductance plateaus. In addition, we postulate the mechanical-electronic logic operation mechanisms based on the piezotronics effect adjusting the transport of edge states in the quantum well device. Fundamental logic units such as NOT, NAND and NOR gates have been innovatively designed for performing the logic computation functions from external mechanical stimuli. The logic nanodevices based on the topological insulator have near zeropower consumption and ultrahigh ON/OFF ratio. This work provides a deep insight into the piezotronics effect on the transport of bulk and edge states of the quantum well device, and offers novel solutions to design high-performance low-power mechanical-electronic logic devices.

Strain-induced piezoelectric field effectively controls a GaAs/Ge/GaAs quantum well from a normal state to a topological insulator state. The quantum piezotronic device can be used for the low power consumption signal converter and quantum information memory device.

High-performance piezo-phototronic multijunction solar cells based on single-type two-dimensional materials,

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As a candidate for next‐generation solar devices, perovskite solar cells are increasingly being studied for their rapid increased power conversion efficiency (PCE). One of the possible routes to further increase PCE is the introduction of polarization in the absorption layer which functions as a method for increasing the built‐in potential and reducing the interface barrier, leading to much improved carrier separation and extraction. This technique uses the principle of the piezophototronic effect utilized for obtaining enhanced optoelectronic performances. Herein, to introduce internal polarization while maintaining optical absorption performance of the perovskite, organic–inorganic hybrid perovskite composite film solar cells are fabricated by doping polarized polyvinylidenefluoride‐co‐trifluoroethylene (P(VDF‐TrFE)) into the perovskite. The composite film is polarized with an external potential, subsequently inducing the piezophototronic effect to enhance the performances of perovskite solar cells. Experimental results show that this simple polarization method has effectively improved several key characteristics of the solar cell. The PCE has reached up to 22.1%, the short‐circuit current (Jsc) increases to 24.2 mA cm−2, and the open‐circuit voltage (Voc) increases to 1.18 V.