Effect of starting SOI material quality on low-frequency noise characteristics in partially depleted floating-body SOI MOSFETs

A Theoretical Study of Low Power Soi Technology

“…Standard LOCOS (Local Oxidation of Silicon) or STI (Shallow Trench Isolation) processes are employed to provide lateral isolation from adjacent devices. [3,4,5]Most of the early SOI devices were fabricated with SOS (Silicon-On-Sapphire) wafers. The unique feature of today"s SOI wafers is that they have a buried silicon oxide (Buried Oxide, or BOX) layer extending across the entire wafer, just below a surface layer of device-quality single crystal silicon.…”

Silicon on Insulator Technology Review

“…Obviously, the process [78,85,93]simulation, device simulation, circuit simulation, and layout TCAD tools employed by designers must accurately model the peculiarities (and advantages) of SOI CMOS to achieve optimal device design, circuit design, layout and processing approaches for CMOS ICs fabricated with SOI wafers. CMOS transistors designed for use with SOI wafers are classified by the thickness of the device-quality single-crystal silicon layer (at the surface above the BOX) relative to the depths of the source-drain junction and channel depletion layers in the device with the operating voltages applied.…”

“…Standard LOCOS (Local Oxidation of Silicon) or STI (Shallow Trench Isolation) processes are employed to provide lateral isolation from adjacent devices. [130,129,78]Most of the early SOI devices were fabricated with SOS (Silicon-On-Sapphire) wafers. The unique feature of today's SOI wafers is that they have a buried silicon oxide (Buried Oxide, or BOX) layer extending across the entire wafer, just below a surface layer of device-quality singlecrystal silicon.. At the present time, most SOI wafers are fabricated by use of one of two basic approaches.…”

Transfer of InP epilayers by wafer bonding

“…ELTRAN has the advantage of a better ARTICLE IN PRESS quality and thickness control of thin top Si on SOI, but is more expensive than the other process Refs. [66][67][68]. Like Si, III-V materials can also be etched porous, e.g.…”