Effect of sputtering power on the structure and optical band gap of SiC thin films

Cheng, Yong; Huang, Xiaozhong; Du, Zuojuan; Xiao, Jiang

doi:10.1016/j.optmat.2017.09.031

Cited by 40 publications

(19 citation statements)

References 41 publications

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“…Therefore, the respective values of silicon carbide should also be considered, and they are still lower than those of silicon nitride. Taking all the above arguments into account, one should state that a supplement of carbon lowers the magnitude of optical gap in both silicon oxide and silicon nitride coatings and the values recorded in this work remain well within the ranges reported in the literature [33][34][35].…”

Section: Optical Propertiessupporting

confidence: 86%

Thin SiNC/SiOC Coatings with a Gradient of Refractive Index Deposited from Organosilicon Precursor

et al. 2020

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In this work, optical coatings with a gradient of the refractive index are described. Its aim was to deposit, using the RF PECVD method, films of variable composition (ranging from silicon carbon-oxide to silicon carbon-nitride) for a smooth change of their optical properties enabling a production of the filter with a refractive index gradient. For that purpose, two organosilicon compounds, namely tetramethyldisilazane and hexamethyldisilazane, were selected as precursor compounds. The results reveal better optical properties of the materials obtained from the latter source. Depending on whether deposited in pure oxygen atmosphere or under conditions of pure nitrogen, the refractive index of the coatings amounted to 1.65 and to 2.22, respectively. By using a variable composition N2/O2 gas mixture, coatings of intermediate magnitudes of “n” were acquired. The optical properties were investigated using both UV-Vis absorption spectroscopy and variable angle spectroscopic ellipsometry. The chemical structure of the coatings was studied with the help of Fourier transform infrared and X-ray photoelectron spectroscopies. Finally, atomic force microscopy was applied to examine their surface topography. As the last step, a “cold mirror” type interference filter with a gradient of refractive index was designed and manufactured.

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Section: Optical Propertiessupporting

confidence: 86%

Thin SiNC/SiOC Coatings with a Gradient of Refractive Index Deposited from Organosilicon Precursor

et al. 2020

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“…The broad band situated between 1200 and 1600 cm −1 is related to C–C vibrational modes. The Gaussian fitting of this broad band reveals 3 peaks: 2 typical peaks of amorphous carbon materials (D peak at 1380 cm −1 and G peak at 1550 cm −1 ) and an a-C peak centered at 1450 cm −1 [ 26 ]. The G peak is directly related to the bond stretching of sp 2 sites in both graphitic ring and olefinic chain structures, a common feature of all disordered carbons (sp 3 hybridization), while the D peak is an indication that the sp 2 sites are organized only into graphitic rings.…”

Section: Resultsmentioning

confidence: 99%

Room Temperature Deposition of Nanocrystalline SiC Thin Films by DCMS/HiPIMS Co-Sputtering Technique

Tiron

Ursu²,

Cristea

et al. 2022

Nanomaterials

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Due to an attractive combination of chemical and physical properties, silicon carbide (SiC) thin films are excellent candidates for coatings to be used in harsh environment applications or as protective coatings in heat exchanger applications. This work reports the deposition of near-stoichiometric and nanocrystalline SiC thin films, at room temperature, on silicon (100) substrates using a DCMS/HiPIMS co-sputtering technique (DCMS—direct current magnetron sputtering; HiPIMS—high-power impulse magnetron sputtering). Their structural and mechanical properties were analyzed as a function of the process gas pressure. The correlation between the films’ microstructure and their mechanical properties was thoroughly investigated. The microstructure and morphology of these films were examined by appropriate microscopic and spectroscopic methods: atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and Raman spectroscopy, while their mechanical and tribological properties were evaluated by instrumented indentation and micro-scratch techniques. The lowest value of the working gas pressure resulted in SiC films of high crystallinity, as well as in an improvement in their mechanical performances. Both hardness (H) and Young’s modulus (E) values were observed to be significantly influenced by the sputtering gas pressure. Decreasing the gas pressure from 2.0 to 0.5 Pa led to an increase in H and E values from 8.2 to 20.7 GPa and from 106.3 to 240.0 GPa, respectively. Both the H/E ratio and critical adhesion load values follow the same trend and increase from 0.077 to 0.086 and from 1.55 to 3.85 N, respectively.

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“…Non-conductive compounds used as targets, such as SiC or Si, require the use of Radio Frequency Magnetron Sputtering to prevent the accumulation of electric charge [ 101 ]. Amorphous layers can be deposited with a temperature lower than 500 °C [ 102 , 103 ]. As a rule, a low deposition temperature increases the refractive index up to 3.2 at a wavelentgh of 630 nm [ 103 , 104 ]; whereas it diminishes the transmittance of amorphous SiC [ 104 ], as shown in Figure 7 .…”

Section: Silicon Carbide Materialsmentioning

confidence: 99%

“…Amorphous layers can be deposited with a temperature lower than 500 °C [ 102 , 103 ]. As a rule, a low deposition temperature increases the refractive index up to 3.2 at a wavelentgh of 630 nm [ 103 , 104 ]; whereas it diminishes the transmittance of amorphous SiC [ 104 ], as shown in Figure 7 .…”

Section: Silicon Carbide Materialsmentioning

confidence: 99%

Novel Photonic Applications of Silicon Carbide

Shi

et al. 2023

Materials

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Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.

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Effect of sputtering power on the structure and optical band gap of SiC thin films

Cited by 40 publications

References 41 publications

Thin SiNC/SiOC Coatings with a Gradient of Refractive Index Deposited from Organosilicon Precursor

Thin SiNC/SiOC Coatings with a Gradient of Refractive Index Deposited from Organosilicon Precursor

Room Temperature Deposition of Nanocrystalline SiC Thin Films by DCMS/HiPIMS Co-Sputtering Technique

Novel Photonic Applications of Silicon Carbide

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