Effect of spatial relationship between arc plasma and substrate on the properties of transparent conducting Ga-doped ZnO thin films prepared by vacuum arc plasma evaporation

Indium-free GZO thin films prepared using plasma-enhanced atomic layer deposition: toward thin film transistor application

“…Recently, pulsed laser deposition, 26,27 molecular beam epitaxy, 28 metal-organic chemical vapor deposition, [29][30][31] chemical spray, [32][33][34] sol-gel methods, [35][36][37] magnetron sputtering, [38][39][40][41][42] arc plasma evaporation, [43][44][45] ion plating [46][47][48] and other methods have been applied for GZO thin film deposition. Owing to the increasing demand for thinner and smaller electronic products, the attention to atomic layer deposition (ALD) technology has also increased as it can precisely control the thickness and deposit films on highaspect-ratio surfaces.…”