Effect of spatial inhomogeneity of charge carrier mobility on current–voltage characteristics in organic field-effect transistors

Sworakowski, J.; Bielecka, Urszula; Lutsyk, Petro; Janus, Krzysztof

doi:10.1016/j.tsf.2014.09.060

Cited by 16 publications

(21 citation statements)

References 53 publications

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“…b for the cr‐PVA/PEDOT/CuPc device corresponds to the mobility dependence µ ∝ [1–exp (– z/λ )] mentioned above, except for the slight decrease after the µ maximum around l 0 ≈ 15 nm. This can be verified by considering an average mobility given by

\overset{true¯}{μ} = l_{0}^{- 1} \int_{0}^{l_{0}} μ false(z false) normald z = μ_{0} l_{0}^{- 1} \int_{0}^{l_{0}} [1 - \exp (- z / λ)] d z = μ_{0} {1 - λ true/ l_{0} [1 - \exp (- l_{0} / λ)]},

where μ 0 is the mobility in the bulk and λ a constant of the order of the molecular dimensions . Equation (5) fits the experimental data with PEDOT in Fig.…”

Section: Resultsmentioning

confidence: 75%

“…4b for the cr-PVA/PEDOT/CuPc device corresponds to the mobility dependence m / [1-exp (-z/l)] mentioned above, except for the slight decrease after the m maximum around l 0 % 15 nm. This can be verified by considering an average mobility given by [6,16]…”

Section: Introductionmentioning

confidence: 88%

“…where m 0 is the mobility in the bulk and l a constant of the order of the molecular dimensions [6]. Equation (5) fits the experimental data with PEDOT in Fig.…”

Section: Introductionmentioning

confidence: 88%

“…As a consequence, the structural and electrical properties near this interface play a crucial role in the transistor performance. Interface roughness, difference in molecular conformation or organization, or the presence of charged domains or dipoles at the interface , which imply in incremented energetic disorder in the interface vicinity, may strongly affect the percolation paths for charge carrier transport from source to drain . This effect is more pronounced in the bottleneck region, where the carrier flow is confined to the vicinities of the interface.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension

Jastrombek

Tavares

Meruvia

et al. 2015

Physica Status Solidi (a)

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The charge carrier mobility is an important parameter that directly affects the performance of organic field‐effect transistors. We use copper phthalocyanine (CuPc)‐based transistors having crosslinked poly(vinyl alcohol) (cr‐PVA) as gate insulator to study the variation of the mobility in CuPc with the distance from the gate insulator interface. By measuring the mobility of the charge carriers flowing along the channel as a function of the minimum thickness of the effective channel near to the transistor source, we demonstrate that the mobility is low near to the interface and shows a maximum at approximately 5 nm from the interface. The mobility dependence on distance from interface can be modified through the inclusion of a poorly conducting thin PEDOT:PSS layer between gate insulator and channel semiconductor, which effectively acts as a gate insulator extension. This procedure is a simple but efficient strategy to improve organic field‐effect transistor performance, positively affecting the transconductance and the mobility, which in the studied devices is increased by a factor 20. The improvement is attributed to the suppression of the deleterious consequences of interface charge traps on transport along the channel and is, in principle, a general approach applicable to other organic field‐effect transistor materials combinations.

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\overset{true¯}{μ} = l_{0}^{- 1} \int_{0}^{l_{0}} μ false(z false) normald z = μ_{0} l_{0}^{- 1} \int_{0}^{l_{0}} [1 - \exp (- z / λ)] d z = μ_{0} {1 - λ true/ l_{0} [1 - \exp (- l_{0} / λ)]},

where μ 0 is the mobility in the bulk and λ a constant of the order of the molecular dimensions . Equation (5) fits the experimental data with PEDOT in Fig.…”

Section: Resultsmentioning

confidence: 75%

Section: Introductionmentioning

confidence: 88%

“…where m 0 is the mobility in the bulk and l a constant of the order of the molecular dimensions [6]. Equation (5) fits the experimental data with PEDOT in Fig.…”

Section: Introductionmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension

Jastrombek

Tavares

Meruvia

et al. 2015

Physica Status Solidi (a)

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show abstract

“…Sworakowski and co-workers used a mobility dependence on the distance z to the interface given by the function μ ∝ [1 -exp(-z/λ)] (where λ is a constant of the order of the molecular dimensions) to account for the interface neighborhood imposed mobility decay. 30,31 The variation in the average mobility with respect to l 0 , when the effective channel bottleneck reaches its minimum thickness (|V GS -V T | → ∞) can then be described using:…”

Section: Resultsmentioning

confidence: 99%

Poly(Vinyl Alcohol) Gate Dielectric Treated With Anionic Surfactant in C60 Fullerene-Based n-Channel Organic Field Effect Transistors

2016

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We report on the preparation and performance enhancement of n-type low-voltage organic field effect transistors (FETs) based on cross-linked poly(vinyl alcohol) (cr-PVA) as gate dielectric and C 60 fullerene as channel semiconductor. Transistors were prepared using bottom-gate top-contact geometry and exhibited field-effect mobility (μ FET ) of 0.18 cm 2 V -1 s -1 . Treatment of the gate dielectric surface with an anionic surfactant, sodium dodecyl sulfate (SDS), passivates the positively charged defects present on the surface of cr-PVA, hence resulting in overall transistor performance improvement with an increase in μ FET to 1.05 cm 2 V -1 s -1 and additional significant improvements in dielectric capacitance, transistor on/off current ratio and transconductance.

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Poly(vinyl alcohol) gate dielectric in organic field-effect transistors

Nawaz

Hümmelgen

2019

J Mater Sci: Mater Electron

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Effect of spatial inhomogeneity of charge carrier mobility on current–voltage characteristics in organic field-effect transistors

Cited by 16 publications

References 53 publications

Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension

Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension

Poly(Vinyl Alcohol) Gate Dielectric Treated With Anionic Surfactant in C60 Fullerene-Based n-Channel Organic Field Effect Transistors

Poly(vinyl alcohol) gate dielectric in organic field-effect transistors

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