2019
DOI: 10.1007/s10854-019-00873-5
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Poly(vinyl alcohol) gate dielectric in organic field-effect transistors

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Cited by 31 publications
(36 citation statements)
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“…[ 46–48 ] However, this results in PVA slowly absorbing moisture in ambient environments, negatively impacting the electrical performance of fabricated unencapsulated electronic devices, [ 32 ] through an increase in both off state currents and gate leakage. [ 16,49 ]…”
Section: Discussionmentioning
confidence: 99%
“…[ 46–48 ] However, this results in PVA slowly absorbing moisture in ambient environments, negatively impacting the electrical performance of fabricated unencapsulated electronic devices, [ 32 ] through an increase in both off state currents and gate leakage. [ 16,49 ]…”
Section: Discussionmentioning
confidence: 99%
“…Polyvinyl alcohol (PVA) is the first synthetic colloid that was first developed by Haehnel and Herrmann in 1924 [16][17][18][19][20]. It was supported by a paper in Hangzhou City, China [21].…”
Section: Introductionmentioning
confidence: 99%
“…The physical interface of the obtained polymer‐TiO 2 NSs nanocomposite also is extremely smooth and uniform even when compared with other nanoparticle‐incorporated polymer dielectric composites. [ 16,23,24,40 ] Kim et al. reported that the modified surface of the inorganic nanoparticles can reduce the roughness of the dielectric layer, as well as the interface with organic dielectrics.…”
Section: Resultsmentioning
confidence: 99%
“…In this work, we adopted poly(vinyl alcohol) (PVA) as the polymer matrix, which is a water‐soluble polymer material with a relatively high k value ( k = 4–8) that is often utilized in organic transistors, and fabricated an organic‐inorganic hybrid film with 2D TiO 2 NSs with mechanically flexible nature. [ 16,23,24 ] As a result, a high‐ k dielectric layer ( k ≈ 43.8) was obtained in which the inorganic fillers were well‐dispersed in the polymer matrix without additional cross‐linking procedure. In other words, a facile methodology based on properly interface‐engineered gate dielectric materials for substantial improvement of k ‐value and leakage current was demonstrated.…”
Section: Introductionmentioning
confidence: 99%