Effect of small crystal size and surface temperature on the Raman spectra of amorphous and nanostructured Si thin films deposited by radiofrequency plasmas

Crystallization of amorphous‐Si using nanosecond laser interference method

“…To characterize the crystallinity of the Si layer, confocal Raman spectroscopy was used and the Raman shift and peak intensities were analyzed to determine the degree of crystallization of the annealed Si surface. In general, the Raman peaks of the a‐Si and crystal Si were observed at approximately 470 cm −1 and approximately 520 cm −1 , respectively . In the case of the laser annealed Si, a peak at 520 cm −1 or less was observed depending on the Si grains.…”

“…In the case of the laser annealed Si, a peak at 520 cm −1 or less was observed depending on the Si grains. It is known that a Raman peak at near 500 cm −1 corresponds to micro crystalline‐Si (micro‐Si) or poly‐Si …”

“… For easy comparison, each curve was shifted equally in the vertical direction. For a laser intensity up to 32% of the maximum intensity, corresponding to 96 kW/cm 2 , the Raman spectra of the a‐Si phase were obtained, where the maximum peak near 470 cm −1 is known as the transversal optical mode of the Si–Si vibrations in the a‐Si phase . However, for laser intensity over 40% of the maximum intensity, an additional peak appeared near 500 cm −1 , corresponding to the poly‐Si or micro‐Si phase .…”

Evolution of Si suboxides into Si nanocrystals during rapid thermal annealing as revealed by XPS and Raman studies

“…Information concerning the formation and crystallite size can be obtained from the shape and positions of the optical phonon bands [16][17][18]. For a typical Raman spectra of thin-layer amorphous SiO x film on Si wafer, there is a weak peak at $300 and a sharp peak at $520 cm À1 , corresponding to the crystalline silicon (substrate) lattice vibrations, and two broad peaks at $160 and $480 cm À1 due to scattering from amorphous Si [19][20][21]. These two broad peaks are usually used to characterize the .…”

“…formation of small-size (more than 1 nm) amorphous Si phase domain in SiO x films [16][17][18][19][20][21][22]. The formation of nc-Si can lead to a size-dependent down shift and broadening of the optical phonon peak at $520 cm À1 due to the phonon confinement effect in the nc-Si, which can be exploited to characterize the size of nc-Si [16][17][18].…”